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Product Detailed Parameters
- Description：160V 600MA 625MW TH TRANSISTOR-S
- Series：-
- Mfr：Central Semiconductor Corp
- Package：Tape & Reel (TR)
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：600 mA
- Voltage - Collector Emitter Breakdown (Max)：160 V
- Vce Saturation (Max) @ Ib, Ic：200mV @ 5mA, 50mA
- Current - Collector Cutoff (Max)：50nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：80 @ 10mA, 5V
- Power - Max：625 mW
- Frequency - Transition：300MHz
- Operating Temperature：-65°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-226-3, TO-92-3 (TO-226AA) Formed Leads
- Supplier Device Package：TO-92
- Grade：-
- Qualification：-
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Overview
The 2N5551 TRE TIN/LEAD is a silicon NPN bipolar junction transistor manufactured by Central Semiconductor Corp. It operates in a single configuration within a TO-92-3 package with kinked leads. Key electrical ratings include a maximum collector-emitter voltage of 160 V, a collector-base voltage of 180 V, and an emitter-base voltage of 6 V. The device supports a maximum DC collector current of 600 mA and features a power dissipation capacity of 625 mW. Its gain-bandwidth product reaches 300 MHz, with a collector-emitter saturation voltage of 200 mV. Operating temperatures range from -65°C to +150°C.
Feature Summary
- Hermetic construction suitable for harsh environments
- High immunity to total ionizing dose radiation
- Qualified under ESCC 5202/019 specification
Applications
- Space electronics systems
- Preamplifier circuits
- Oscillator configurations
- Current mirror applications
Procurement Notes
Verify the specific ordering suffix 'TRE' against official Central Semiconductor documentation to confirm tape-and-reel packaging availability. Confirm that the 'TIN/LEAD' designation matches required plating specifications for your assembly process. Ensure compatibility with ESCC 5202/019 standards if radiation hardness is critical. Request the latest datasheet directly from the manufacturer to validate all electrical parameters before integration.
Selection Notes
Select this component when high reliability and radiation tolerance are required for NPN switching or amplification tasks. The TO-92-3 kinked lead package facilitates through-hole mounting in constrained spaces. Consider the 160 V collector-emitter rating for medium-voltage applications. Verify thermal management requirements given the 625 mW power dissipation limit at elevated operating temperatures up to 150°C.
Part Context
This part belongs to the 2N5551 series of high-reliability bipolar transistors designed for severe environment conditions. It serves as a robust alternative to standard commercial-grade devices, offering enhanced durability for aerospace and military electronic devices. The series is specifically recommended for low-current and high-precision circuit designs where stability under radiation exposure is essential.
Replacement Considerations
Check Central Semiconductor's cross-reference documents for equivalents discontinued by other manufacturers. Verify pinout compatibility and electrical parameter overlaps before substituting. Ensure any replacement meets the same radiation qualification standards if used in space applications.
