2N5551

Overview

The Diodes Incorporated 2N5551 is a single NPN bipolar junction transistor (BJT) designed for general-purpose switching and amplification applications. It utilizes silicon planar technology housed in a PowerDI5-3 surface-mount package. The device supports a maximum collector-emitter voltage of 160 V and a continuous collector current of 600 mA. Key electrical characteristics include a transition frequency of 130 MHz, a power dissipation rating of 2.25 W, and a DC current gain range from 80 to 250 at 10 mA and 5 V. It operates within a temperature range of -55°C to +150°C.

Feature Summary

• High-voltage capability with 160 V collector-emitter breakdown
• Surface-mount PowerDI5-3 package for automated assembly
• AEC-Q101 qualified for automotive reliability standards
• Low saturation voltage for efficient switching performance

Applications

• Automotive electronic circuits requiring AEC-Q101 compliance
• General-purpose high-voltage switching applications
• Amplifier stages in consumer electronics
• Power management circuitry in compact devices

Procurement Notes

Verify the specific suffix against official Diodes Incorporated documentation to confirm exact binning, tape-and-reel specifications, and RoHS status. Confirm that the PowerDI5-3 package variant matches the required footprint for PCB layout. Ensure the selected part number corresponds to the intended volume packaging configuration before finalizing procurement orders.

Selection Notes

Select this component when a surface-mount NPN transistor with high-voltage tolerance is required. The PowerDI5-3 package offers a compact solution compared to traditional through-hole options. Consider the 2.25 W power dissipation rating for thermal management in dense layouts. Verify that the 130 MHz transition frequency meets the signal processing requirements of the target application design.

Part Context

This component belongs to the BJT family within Diodes Incorporated's discrete semiconductor portfolio. It serves as a modern surface-mount alternative to legacy through-hole transistors like the TO-92 packaged versions. The device integrates standard NPN functionality with enhanced thermal performance suitable for automated pick-and-place manufacturing processes.

Replacement Considerations

Cross-reference with other manufacturers' 2N5551 equivalents such as those from onsemi or Diotec Semiconductor. Verify pinout compatibility and package dimensions when substituting with different suppliers. Ensure that the replacement part maintains the same AEC-Q101 qualification if automotive usage is required.