ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：TRANS NPN 160V 0.3A TO-92-3
- Series：-
- Mfr：NXP USA Inc.
- Package：Tape & Reel (TR)
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：300 mA
- Voltage - Collector Emitter Breakdown (Max)：160 V
- Vce Saturation (Max) @ Ib, Ic：200mV @ 5mA, 50mA
- Current - Collector Cutoff (Max)：50nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：80 @ 10mA, 5V
- Power - Max：630 mW
- Frequency - Transition：300MHz
- Operating Temperature：150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-226-3, TO-92-3 (TO-226AA) Formed Leads
- Supplier Device Package：TO-92-3
- Grade：-
- Qualification：-
Download product information
Overview
The NXP USA Inc. 2N5551,116 is an NPN high-voltage transistor housed in a TO-92 (SOT54) plastic package. It features a collector-emitter voltage of 160 V and a maximum DC collector current of 300 mA. The device offers a transition frequency up to 300 MHz and a minimum DC current gain of 80 at 10 mA. Total power dissipation reaches 630 mW at 25 °C ambient temperature.
Feature Summary
- High voltage capability with a 160 V collector-emitter breakdown rating
- Low current operation optimized for general purpose switching and amplification
- Plastic single-ended leaded through-hole packaging for standard mounting
Applications
- Switching circuits in high voltage applications
- Amplification stages in telephony systems
- General purpose high voltage amplifier designs
Procurement Notes
Verify the specific ordering suffix matches the required package variant and manufacturing date code. Confirm that the component status aligns with current production requirements. Ensure compatibility with existing PCB footprints designated for SOT54 packages. Check for any recent Customer Product/Process Change Notifications regarding material or dimensional updates.
Selection Notes
Select this component for designs requiring moderate voltage handling with low current constraints. The TO-92 package suits through-hole assembly processes. Consider the thermal resistance of 200 K/W for heat dissipation planning. Verify that the 160 V rating exceeds the peak circuit voltages to ensure reliable operation under stress conditions.
Part Context
This device belongs to the 2N5550/2N5551 series of NPN high-voltage transistors originally specified by Philips Semiconductors. The series provides complementary PNP options such as the 2N5400 and 2N5401. The specification defines electrical characteristics for both low and high voltage variants within the same family structure.
Replacement Considerations
Official substitutes include the PMST5551 and PMBT5551 from Nexperia. Other compatible parts are the 2N5551TA, 2N5551TAR, and 2N5551G from Fairchild Semiconductor.
