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The NXP USA Inc. 2N5551,412 is an NPN high-voltage transistor housed in a TO-92 (SOT54) plastic package. It features a collector-emitter voltage of 160 V and a collector-base voltage of 180 V. The device supports a maximum DC collector current of 300 mA with peak currents up to 600 mA. Power dissipation reaches 630 mW at 25 °C ambient temperature. The transition frequency ranges from 100 MHz to 300 MHz, and the minimum DC current gain is 80 at 10 mA.
Verify the specific ordering suffix against the manufacturer's latest documentation to confirm exact mechanical dimensions and electrical tolerances. Ensure compatibility with existing PCB footprints designed for the SOT54 outline. Confirm that the procurement source provides original components matching the Philips Semiconductors specification standards.
Select this component when designing circuits requiring high voltage handling with moderate current limits. The TO-92 package is appropriate for through-hole mounting where space allows. Consider the complementary PNP types 2N5400 or 2N5401 if push-pull configurations are required for the design.
This device belongs to the 2N5550/2N5551 series of NPN high-voltage transistors originally specified by Philips Semiconductors. The series is characterized by its ability to operate reliably in high voltage environments while maintaining low current consumption profiles typical of general-purpose discrete semiconductor products.
Official complementary parts include 2N5400 and 2N5401. Verify pinout alignment and voltage ratings before substituting with other generic NPN transistors.
The maximum collector-emitter voltage is 160 V.
The device uses a TO-92 plastic package, also known as SOT54.
Yes, it is specifically designed for switching and amplification in high voltage applications such as telephony.