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Product Detailed Parameters
- Description：TRANS NPN 160V 0.6A TO-92-3
- Series：-
- Mfr：onsemi
- Package：Bulk
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：600 mA
- Voltage - Collector Emitter Breakdown (Max)：160 V
- Vce Saturation (Max) @ Ib, Ic：200mV @ 5mA, 50mA
- Current - Collector Cutoff (Max)：50nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：80 @ 10mA, 5V
- Power - Max：625 mW
- Frequency - Transition：100MHz
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package：TO-92-3
- Grade：-
- Qualification：-
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Overview
The onsemi 2N5551_J05Z is an NPN silicon general-purpose amplifier transistor designed for high-voltage applications. It operates within a collector-emitter voltage of 160 V and supports a continuous collector current of 600 mA. The device features a DC current gain (hFE) ranging from 80 to 250 at IC = 10 mA, with a transition frequency (fT) of 100 MHz. Thermal characteristics include a maximum power dissipation of 625 mW and a junction-to-ambient thermal resistance of 200 °C/W. It functions reliably across a temperature range of -55 °C to +150 °C.
Feature Summary
- Designed for general-purpose high-voltage amplifiers
- Capable of driving gas discharge display circuits
- Compliant with RoHS standards and free of halogens and brominated flame retardants
Applications
- General-purpose high-voltage amplification
- Gas discharge display drivers
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official documentation to confirm package type and shipping configuration. Check the latest datasheet revision history for discontinuation notices or parameter updates. Ensure compliance with environmental regulations relevant to your region before finalizing procurement.
Selection Notes
Select this component when designing circuits requiring high-voltage NPN switching or amplification. Consider the 160 V breakdown rating and 600 mA current capability for load requirements. Evaluate the thermal resistance and power dissipation limits to ensure adequate heat management in the target application environment.
Part Context
This part belongs to the 2N5551 series of NPN bipolar junction transistors manufactured by onsemi. It is housed in a TO-92-3 lead-formed package (Case 135AR). The device is intended for use in standard through-hole mounting configurations for electronic assemblies requiring robust high-voltage performance.
Replacement Considerations
Consult the manufacturer's cross-reference tools for parametrically similar parts. Verify that any substitute matches the 160 V collector-emitter voltage and 600 mA current ratings. Confirm pinout compatibility and package dimensions before implementation.
