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Product Detailed Parameters
- Description：TRANS NPN 160V 0.6A TO-92-3
- Series：-
- Mfr：onsemi
- Package：Bulk
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：600 mA
- Voltage - Collector Emitter Breakdown (Max)：160 V
- Vce Saturation (Max) @ Ib, Ic：200mV @ 5mA, 50mA
- Current - Collector Cutoff (Max)：50nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：80 @ 10mA, 5V
- Power - Max：625 mW
- Frequency - Transition：100MHz
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-226-3, TO-92-3 (TO-226AA) Formed Leads
- Supplier Device Package：TO-92-3
- Grade：-
- Qualification：-
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Overview
The onsemi 2N5551_J61Z is an NPN silicon general-purpose amplifier transistor designed for high-voltage applications. It operates within a collector-emitter voltage of 160 V and a collector-base voltage of 180 V, supporting a continuous collector current of 600 mA. The device features a DC current gain (hFE) ranging from 80 to 250 at IC = 10 mA and VCE = 5.0 V. It provides a transition frequency (fT) of 100 MHz and maintains a maximum power dissipation of 625 mW. The component functions reliably across a temperature range of -55°C to +150°C.
Feature Summary
- Designed for high-voltage amplification and gas discharge display driver applications
- Compliant with Pb-Free, Halogen Free/BFR Free, and RoHS standards
Applications
- General-purpose high-voltage amplifiers
- Gas discharge display drivers
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official documentation to confirm package type and shipping configuration. Confirm current production status as some variants in this series are discontinued. Ensure compliance with environmental directives such as RoHS and halogen-free requirements before procurement.
Selection Notes
Select this component when designing circuits requiring high collector-emitter breakdown voltage up to 160 V. Consider the thermal resistance characteristics and derating requirements above 25°C for power dissipation management. Verify that the required DC current gain falls within the standard 80 to 250 range specified for general operation.
Part Context
This part belongs to the 2N5551 family of NPN silicon transistors manufactured by onsemi. It serves as a complementary counterpart to PNP devices like the 2N5401. The component utilizes a TO-92-3 lead-formed package (Case 135AR) or similar variations depending on the specific suffix, providing a compact solution for through-hole mounting in electronic assemblies.
Replacement Considerations
Consult the manufacturer's discontinuation notice for obsolete variants. Contact onsemi representatives for information on available replacements if the specific ordered suffix is no longer produced.
