2N5551BU

$0.19

Description：TRANS NPN 160V 0.6A TO-92-3
Series：-

SKU:bae15418d845 Category: Single Bipolar Transistors Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：TRANS NPN 160V 0.6A TO-92-3
Series：-
Mfr：onsemi
Package：Bulk
Transistor Type：NPN
Current - Collector (Ic) (Max)：600 mA
Voltage - Collector Emitter Breakdown (Max)：160 V
Vce Saturation (Max) @ Ib, Ic：200mV @ 5mA, 50mA
Current - Collector Cutoff (Max)：50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：80 @ 10mA, 5V
Power - Max：625 mW
Frequency - Transition：100MHz
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package：TO-92-3
Grade：-
Qualification：-

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2N5551BU

Overview

The onsemi 2N5551BU is a general-purpose NPN silicon bipolar junction transistor designed for high-voltage amplifiers and gas discharge display drivers. It operates in a TO-92-3 (Case 135AN) through-hole package with a maximum collector-emitter voltage of 160 V, a collector-base voltage of 180 V, and an emitter-base voltage of 6 V. The device supports a continuous collector current of 600 mA and dissipates up to 625 mW of power. Electrical characteristics include a DC current gain ranging from 80 to 250 at IC = 10 mA, a transition frequency of 100 MHz, and a collector-emitter saturation voltage of 200 mV at IC = 50 mA. Operating temperatures range from -55°C to +150°C.

Feature Summary

Designed for general-purpose high-voltage amplifier applications
Capable of driving gas discharge displays
Compliant with Pb-Free, Halogen Free, and BFR Free standards

Applications

General-purpose high-voltage amplifiers
Gas discharge display drivers

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm the exact package type and shipping configuration. Confirm RoHS compliance status directly with the supplier or manufacturer before procurement. Ensure that the component meets all applicable environmental regulations required for the intended manufacturing process.

Selection Notes

Select this component when a standard NPN transistor with a minimum 160 V collector-emitter breakdown voltage is required. Verify that the thermal resistance and power dissipation limits align with the circuit's ambient temperature conditions. Ensure the chosen package variant matches the PCB layout requirements for the specific application design.

Part Context

This part belongs to the 2N5551 series of NPN transistors manufactured by onsemi. The series includes variants such as the 2N5551TA and 2N5551TF, which share similar electrical specifications but differ in packaging and shipping formats. The 2N5551BU specifically utilizes the Case 135AN bulk bag packaging format.