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The onsemi 2N5551CBU is a discontinued NPN general-purpose silicon transistor designed for high-voltage amplifiers and gas discharge display drivers. It features a collector-emitter voltage of 160 V, continuous collector current of 600 mA, and total device dissipation of 625 mW. The component operates within a junction temperature range of -55 to +150 °C and utilizes a TO-92-3 package.
Verify the discontinuation status directly with onsemi before design finalization. Confirm availability through authorized representatives as standard distribution channels may not stock this specific part number. Ensure alternative sourcing strategies are established due to the end-of-life designation.
Select this component only if the application specifically requires the 2N5551 electrical characteristics and legacy compatibility. Evaluate the discontinuation impact on long-term supply chain stability. Consider equivalent active devices that meet the same voltage, current, and package requirements for new designs.
The 2N5551 series consists of NPN transistors intended for general-purpose use. The 2N5551CBU variant belongs to this family but is listed as discontinued in official documentation. Other variants like the 2N5551BU remain available, offering similar specifications with different packaging options.
Contact an onsemi representative for information on replacement parts. No specific substitute part numbers are confirmed in the provided datasheet.