2N5551CTA

Overview

The onsemi 2N5551CTA is a discontinued NPN silicon general-purpose amplifier transistor housed in a TO-92-3 (Case 135AR) lead-formed package. It supports a maximum collector-emitter voltage of 160 V and continuous collector current of 600 mA, with power dissipation rated at 625 mW. The device features a minimum DC current gain of 80 at IC = 10 mA and VCE = 5.0 V, and a transition frequency of 100 MHz. Operating temperatures range from -55°C to +150°C.

Feature Summary

• Designed for high-voltage amplification and gas discharge display driver applications
• Constructed using Pb-Free, Halogen Free, and BFR Free materials compliant with RoHS standards

Applications

• General-purpose high-voltage amplifiers
• Gas discharge display drivers

Procurement Notes

Verify the discontinuation status directly with onsemi before design finalization. Confirm that alternative packages or updated part numbers are available for long-term supply requirements. Ensure procurement channels provide valid traceability documentation despite the component's retired lifecycle stage.

Selection Notes

Select this component only if legacy compatibility is required. Evaluate thermal resistance characteristics carefully due to the low power dissipation rating. Consider modern replacements if higher current gain or improved radiation hardness is needed for the specific application environment.

Part Context

This part belongs to the 2N5551 series of NPN bipolar junction transistors manufactured by onsemi. It shares core electrical specifications with variants like the 2N5551TA but utilizes a specific Ammo Pack shipping configuration associated with the CTA suffix. The device is classified under general-purpose small-signal amplifiers.

Replacement Considerations

Consult onsemi representatives for current active substitutes. The datasheet lists the 2N5551TA as an active equivalent in the same package type.