2N5551CYTA

$0.08

Description：TRANS NPN 160V 0.6A TO-92-3
Series：-

SKU:2489989a3076 Category: Single Bipolar Transistors Brand: onsemi

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：TRANS NPN 160V 0.6A TO-92-3
Series：-
Mfr：onsemi
Package：Tape & Box (TB)
Transistor Type：NPN
Current - Collector (Ic) (Max)：600 mA
Voltage - Collector Emitter Breakdown (Max)：160 V
Vce Saturation (Max) @ Ib, Ic：200mV @ 5mA, 50mA
Current - Collector Cutoff (Max)：50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：80 @ 10mA, 5V
Power - Max：625 mW
Frequency - Transition：100MHz
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package：TO-92-3
Grade：-
Qualification：-

Download product information

2N5551CYTA

Overview

The onsemi 2N5551CYTA is a discontinued NPN silicon general-purpose amplifier transistor designed for high-voltage applications. It features a collector-emitter voltage of 160 V and a continuous collector current of 600 mA. The device operates within a junction temperature range of -55°C to +150°C with a total power dissipation of 625 mW. Electrical characteristics include a DC current gain (hFE) ranging from 80 to 250 at IC = 10 mA, VCE = 5 V, and a transition frequency (fT) of 100 MHz. The component utilizes a TO-92-3 lead-formed package.

Feature Summary

Designed for general-purpose high-voltage amplifiers
Capable of driving gas discharge displays
Compliant with Pb-Free, Halogen Free, and BFR Free standards

Applications

General-purpose high-voltage amplification circuits
Gas discharge display drivers

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm exact electrical binning and packaging specifications. Note that this part number is listed as discontinued in the provided datasheet; consult the manufacturer or authorized distributors for current availability status and potential alternative sourcing options before finalizing procurement plans.

Selection Notes

Select this component when designing circuits requiring an NPN transistor with a minimum 160 V collector-emitter breakdown voltage. Ensure the application stays within the 600 mA continuous current limit and 625 mW power dissipation constraints. Verify that the required DC current gain falls within the standard 80 to 250 range specified for the base device configuration.

Part Context

This component belongs to the 2N5551 series of NPN silicon transistors manufactured by onsemi. The series is characterized by its suitability for high-voltage switching and amplification tasks. The specific CYTA designation indicates a particular assembly and testing configuration within the broader product family, distributed in a TO-92-3 lead-formed package.

Replacement Considerations

The datasheet lists 2N5551CTA and 2N5551YTA as discontinued devices within the same package type. No active direct substitutes are explicitly identified in the provided text; verify cross-reference data with the manufacturer for equivalent active parts.