2N5551RLRAG

2N5551RLRAG

  • Description:TRANS NPN 160V 0.6A TO92
  • Series:-

SKU:d8a2c49ce8ee Category: Brand:

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Product Detailed Parameters

  • Description:TRANS NPN 160V 0.6A TO92
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):600 mA
  • Voltage - Collector Emitter Breakdown (Max):160 V
  • Vce Saturation (Max) @ Ib, Ic:200mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max):50nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 10mA, 5V
  • Power - Max:625 mW
  • Frequency - Transition:300MHz
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 Long Body, Formed Leads
  • Supplier Device Package:TO-92 (TO-226)
  • Grade:-
  • Qualification:-

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2N5551RLRAG

Overview

The onsemi 2N5551RLRAG is an NPN general-purpose amplifier transistor designed for high-voltage applications and gas discharge display drivers. It operates within a collector-emitter voltage range of 160 V and supports continuous collector currents up to 600 mA. The device features a DC current gain (hFE) ranging from 80 to 250 at IC = 10 mA, with a transition frequency (fT) of 100 MHz. Thermal characteristics include a total power dissipation of 625 mW and a junction-to-ambient thermal resistance of 200 °C/W. It functions reliably across an operating temperature range of -55°C to +150°C.

Feature Summary

  • Designed for high-voltage amplification and gas discharge display driver circuits
  • Provides robust performance under severe environmental conditions with radiation immunity
  • Manufactured using lead-free, halogen-free, and BFR-free compliant processes

Applications

  • General-purpose high-voltage amplifiers
  • Gas discharge display drivers
  • Low current and high precision circuits such as preamplifiers
  • Oscillators and current mirror configurations in harsh environments

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm package type and shipping configuration. Confirm component status, as certain variants within this family have been discontinued. Ensure compliance with RoHS standards and verify that the selected part matches the required hFE binning specifications for your application design.

Selection Notes

Select this component when designing circuits requiring high collector-emitter breakdown voltages and moderate current handling capabilities. Consider the thermal resistance limits and derating requirements above 25°C to ensure reliable operation. Evaluate the noise figure and capacitance parameters if the application involves small-signal processing or high-frequency signal integrity requirements.

Part Context

This device belongs to the 2N5551 series of NPN bipolar junction transistors manufactured by onsemi. It is engineered for general-purpose use where high voltage tolerance is critical. The product line includes various packaging options and hFE bins, with some older variants marked as discontinued in recent updates.

Replacement Considerations

Consult the manufacturer's discontinuation notice for obsolete variants like the 2N5551YBU. Verify equivalent parts based on matching electrical ratings, specifically VCEO, IC, and package dimensions. Cross-reference datasheets to ensure functional compatibility in existing circuit designs.

2N5551RLRAG2N5551RLRAG

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