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Product Detailed Parameters
- Description：TRANS NPN 160V 0.6A TO92
- Series：-
- Mfr：onsemi
- Package：Tape & Box (TB)
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：600 mA
- Voltage - Collector Emitter Breakdown (Max)：160 V
- Vce Saturation (Max) @ Ib, Ic：200mV @ 5mA, 50mA
- Current - Collector Cutoff (Max)：50nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：80 @ 10mA, 5V
- Power - Max：625 mW
- Frequency - Transition：300MHz
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-226-3, TO-92-3 Long Body, Formed Leads
- Supplier Device Package：TO-92 (TO-226)
- Grade：-
- Qualification：-
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Overview
The onsemi 2N5551RLRMG is an NPN silicon general-purpose amplifier transistor designed for high-voltage applications. It features a collector-emitter voltage of 160 V and a continuous collector current of 600 mA. The device operates within a junction temperature range of -55°C to +150°C with a maximum power dissipation of 625 mW. Electrical characteristics include a DC current gain (hFE) ranging from 80 to 250 at IC = 10 mA, and a current gain bandwidth product (fT) of 100 MHz.
Feature Summary
- Designed for general-purpose high-voltage amplifiers
- Capable of driving gas discharge displays
- Compliant with Pb-Free, Halogen Free, and RoHS standards
Applications
- General-purpose high-voltage amplifiers
- Gas discharge display drivers
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official documentation to confirm package type and shipping configuration. Confirm component availability status as some variants in this series are discontinued. Ensure compliance with environmental directives such as RoHS and halogen-free requirements relevant to the target assembly process.
Selection Notes
Select this component for circuits requiring moderate current handling and high voltage blocking capabilities. Evaluate thermal resistance parameters for adequate heat dissipation in the intended enclosure. Verify that the required DC current gain falls within the standard 80 to 250 range or specify tighter binning if necessary for precision applications.
Part Context
This device belongs to the 2N5551 family of NPN bipolar junction transistors manufactured by onsemi. It utilizes a TO-92-3 leaded package suitable for through-hole mounting. The component is part of a broader series including variants like 2N5551TA and 2N5551BU, which share identical electrical specifications but differ in packaging and shipping formats.
Replacement Considerations
Direct substitutes include 2N5551TA and 2N5551BU. These parts share the same electrical ratings and pinout configuration. Verify that the alternative package variant meets the mechanical constraints of the existing printed circuit board layout.
