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Product Detailed Parameters
- Description：TRANS NPN 160V 0.6A TO92
- Series：-
- Mfr：onsemi
- Package：Bulk,Tape & Box (TB)
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：600 mA
- Voltage - Collector Emitter Breakdown (Max)：160 V
- Vce Saturation (Max) @ Ib, Ic：200mV @ 5mA, 50mA
- Current - Collector Cutoff (Max)：50nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：80 @ 10mA, 5V
- Power - Max：625 mW
- Frequency - Transition：300MHz
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-226-3, TO-92-3 Long Body, Formed Leads
- Supplier Device Package：TO-92 (TO-226)
- Grade：-
- Qualification：-
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Overview
The onsemi 2N5551RLRPG is a discontinued NPN general-purpose amplifier transistor housed in a TO-92-3 lead-formed package. It supports a collector-emitter voltage of 160 V and a continuous collector current of 600 mA. The device dissipates up to 625 mW with a junction-to-ambient thermal resistance of 200 °C/W. Electrical characteristics include a DC current gain (hFE) ranging from 80 to 250 at IC = 10 mA, a transition frequency (fT) of 100 MHz, and an operating temperature range of -55 °C to +150 °C.
Feature Summary
- Designed for high-voltage amplification and gas discharge display driver applications
- Compliant with Pb-Free, Halogen Free, and BFR Free standards
Applications
- General-purpose high-voltage amplifiers
- Gas discharge display drivers
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official documentation to confirm exact packaging and marking details. Confirm component availability status as this part number may be discontinued or subject to change. Ensure all electrical parameters meet the design requirements before finalizing procurement decisions.
Selection Notes
Select this component for circuits requiring robust NPN switching or linear amplification within specified voltage limits. Evaluate thermal management strategies given the 200 °C/W junction-to-ambient resistance. Verify that the required hFE range aligns with the standard 80 to 250 specification rather than the narrower 180 to 240 range reserved for specific suffixes.
Part Context
This device belongs to the 2N5551 family of silicon planar NPN transistors manufactured by onsemi. It utilizes a TO-92-3 case outline designed for through-hole mounting. The product line includes various packaging options such as bulk bags and tape-and-reel configurations, though specific suffixes determine the shipping method.
Replacement Considerations
Consult the manufacturer's discontinuation notice for alternative recommendations. Cross-reference with other NPN transistors offering comparable 160 V breakdown voltage and 600 mA current handling capabilities.
