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Product Detailed Parameters
- Description：TRANS NPN 160V 0.6A TO-92-3
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：600 mA
- Voltage - Collector Emitter Breakdown (Max)：160 V
- Vce Saturation (Max) @ Ib, Ic：200mV @ 5mA, 50mA
- Current - Collector Cutoff (Max)：50nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：80 @ 10mA, 5V
- Power - Max：625 mW
- Frequency - Transition：100MHz
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-226-3, TO-92-3 (TO-226AA) Formed Leads
- Supplier Device Package：TO-92-3
- Grade：-
- Qualification：-
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Overview
The onsemi 2N5551TF is an NPN silicon general-purpose amplifier transistor designed for high-voltage applications. It operates in a TO-92-3 lead-formed package with a maximum collector-emitter voltage of 160 V and continuous collector current of 600 mA. The device features a minimum DC current gain (hFE) of 80 at IC = 10 mA, VCE = 5 V, and a transition frequency (fT) of 100 MHz at IC = 10 mA, VCE = 10 V. Total power dissipation is rated at 625 mW, with an operating temperature range from -55°C to +150°C.
Feature Summary
- Designed for general-purpose high-voltage amplifiers and gas discharge display drivers
- Pb-Free, Halogen Free/BFR Free, and RoHS Compliant construction
Applications
- General-purpose high-voltage amplifiers
- Gas discharge display drivers
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging type and shipping quantity. Confirm that the component status is active and not discontinued, as some variants within the 2N5551 series have been marked as obsolete. Ensure compliance with environmental standards such as Pb-Free and RoHS requirements specified in the datasheet.
Selection Notes
Select this component when a single NPN transistor with high breakdown voltage capability is required for signal amplification or switching tasks. Consider the thermal resistance characteristics and power dissipation limits relative to the ambient operating conditions. Verify that the required current gain and bandwidth specifications align with the circuit design parameters.
Part Context
The 2N5551TF belongs to the 2N5551 series of NPN silicon transistors manufactured by onsemi. This series includes various packaging options such as Ammo Pack, Tape & Reel, and Bulk Bag. The TF suffix specifically denotes the Tape & Reel packaging configuration for automated assembly processes.
Replacement Considerations
Consult the manufacturer's discontinuation notice for obsolete variants like 2N5551CTA, 2N5551YTA, and 2N5551YBU. No direct substitute part numbers are explicitly listed in the provided documentation.
