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The onsemi 2N5551TFR is an NPN silicon general-purpose amplifier transistor designed for high-voltage applications. It operates within a collector-emitter voltage of 160 V and supports continuous collector currents up to 600 mA. The device features a maximum power dissipation of 625 mW and a current gain bandwidth product of 100 MHz. Packaged in a lead-formed TO-92-3 (Case 135AR) housing, it functions reliably across a temperature range of -55°C to +150°C.
Verify the specific ordering suffix against official documentation to confirm package type and shipping configuration. Confirm RoHS compliance status directly from the manufacturer's datasheet or latest product change notification. Ensure the component meets environmental requirements for the intended deployment environment before finalizing procurement.
Select this component when designing circuits requiring high-voltage NPN amplification with moderate current handling capabilities. Consider the thermal resistance characteristics and derating requirements above 25°C to ensure reliable operation within the specified junction temperature limits. Verify that the TO-92-3 package dimensions fit the mechanical constraints of the target PCB layout.
This part belongs to the 2N5551 series manufactured by onsemi. It is a single NPN bipolar junction transistor utilizing silicon technology. The device is distinct from complementary PNP variants and serves as a standalone switching or amplifying element in electronic circuits.
Consult the manufacturer's discontinuation notice for obsolete variants such as the 2N5551CTA, 2N5551YTA, and 2N5551YBU. Contact onsemi representatives for information on available alternatives if these discontinued devices are required.