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Product Detailed Parameters
- Description：TRANS NPN 160V 0.6A TO-92-3
- Series：-
- Mfr：onsemi
- Package：Bulk
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：600 mA
- Voltage - Collector Emitter Breakdown (Max)：160 V
- Vce Saturation (Max) @ Ib, Ic：200mV @ 5mA, 50mA
- Current - Collector Cutoff (Max)：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：180 @ 10mA, 5V
- Power - Max：625 mW
- Frequency - Transition：100MHz
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package：TO-92-3
- Grade：-
- Qualification：-
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Overview
The onsemi 2N5551YBU is a discontinued NPN general-purpose amplifier transistor housed in a TO-92-3 (Case 135AN) through-hole package. It features a collector-emitter voltage of 160 V, continuous collector current of 600 mA, and total device dissipation of 625 mW. The 'Y' suffix specifies a DC current gain (hFE) range of 180 to 240 at IC = 10 mA and VCE = 5.0 V. Electrical characteristics include a collector-base breakdown voltage of 180 V, emitter-base breakdown voltage of 6.0 V, and a current gain bandwidth product of 100 MHz.
Feature Summary
- Designed for high-voltage amplification and gas discharge display driver applications
- Manufactured using lead-free, halogen-free, and BFR-free compliant processes
- Provides specific high-gain binning with hFE values between 180 and 240
Applications
- General-purpose high-voltage amplifiers
- Gas discharge display drivers
Procurement Notes
Verify the discontinuation status directly with onsemi or authorized distributors before design finalization. Confirm that the TO-92-3 Case 135AN package dimensions match the target PCB footprint. Ensure the specific Y-bin gain requirements are compatible with the circuit design, as standard non-Y variants offer different gain ranges.
Selection Notes
Select this component when a high-voltage NPN transistor with elevated DC current gain is required for through-hole assembly. The 160 V rating supports high-side switching or amplification tasks. Designers must account for the 625 mW power dissipation limit and derating requirements above 25°C ambient temperature to maintain reliability within the specified -55°C to +150°C junction temperature range.
Part Context
The 2N5551 series comprises NPN silicon planar epitaxial transistors intended for general-purpose use. The 2N5551YBU represents a specific manufacturing lot configuration with defined gain characteristics. It belongs to the broader family of small-signal bipolar junction transistors produced by onsemi for discrete semiconductor applications.
Replacement Considerations
Consult onsemi representatives for current available alternatives. Standard 2N5551BU devices share the same package and electrical ratings but lack the specific 180-240 hFE gain binning associated with the Y suffix.
FAQ
What does the 'Y' suffix indicate for the 2N5551YBU?
The 'Y' suffix denotes a specific DC current gain (hFE) range of 180 to 240, tested at IC = 10 mA and VCE = 5.0 V.
Is the 2N5551YBU currently in production?
No, the 2N5551YBU has been officially discontinued by onsemi as of January 2026.
What is the maximum collector-emitter voltage for this device?
The maximum collector-emitter voltage (VCEO) is rated at 160 V.
