2N5551YTA

Overview

The onsemi 2N5551YTA is a discontinued NPN silicon general-purpose amplifier transistor housed in a TO-92-3 (Case 135AR) lead-formed package. It supports continuous collector currents up to 600 mA and withstands collector-emitter voltages of 160 V and collector-base voltages of 180 V. The device features a maximum power dissipation of 625 mW at 25°C ambient temperature, with a junction-to-ambient thermal resistance of 200 °C/W. Operating temperatures range from -55°C to +150°C. Electrical characteristics include a DC current gain (hFE) of 180 to 240 at IC = 10 mA and VCE = 5.0 V, a transition frequency (fT) of 100 MHz, and a collector-emitter saturation voltage of 0.20 V max at IC = 50 mA.

Feature Summary

• Designed for high-voltage amplification and gas discharge display driver applications
• Features a specific binning of DC current gain ranging from 180 to 240 under standard test conditions
• Constructed using Pb-Free, Halogen Free, and BFR Free materials compliant with RoHS standards

Applications

• General-purpose high-voltage amplifiers
• Gas discharge display drivers

Procurement Notes

Verify the discontinuation status directly with onsemi representatives before design finalization. Confirm that the 'Y' suffix requirement aligns with the specific hFE binning specifications documented in the datasheet. Ensure replacement components meet the same electrical thresholds for voltage ratings, current handling, and thermal dissipation capabilities required by the original circuit design.

Selection Notes

Select this component when a high-voltage NPN transistor with elevated DC current gain is required for amplifier stages or display driving circuits. The specific 'Y' suffix ensures tighter gain control compared to standard variants. Evaluate the thermal management requirements carefully due to the 625 mW power dissipation limit and the associated thermal resistance values provided in the datasheet.

Part Context

This part belongs to the 2N5551 series of NPN silicon transistors manufactured by onsemi. It shares core electrical parameters with other suffixes like the TA and BU variants but differs in packaging and specific gain binning. The YTA variant specifically utilizes the Ammo Pack shipping format within the TO-92-3 Case 135AR physical outline.

Replacement Considerations

Consult onsemi for available alternatives as the 2N5551YTA is officially discontinued. Verify that any substitute maintains the 160 V collector-emitter rating, 600 mA current capacity, and equivalent gain characteristics.