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Product Detailed Parameters
- Description：TRANS NPN 160V 0.6A TO92
- Series：-
- Mfr：onsemi
- Package：Bulk,Tape & Box (TB)
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：600 mA
- Voltage - Collector Emitter Breakdown (Max)：160 V
- Vce Saturation (Max) @ Ib, Ic：200mV @ 5mA, 50mA
- Current - Collector Cutoff (Max)：50nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：80 @ 10mA, 5V
- Power - Max：625 mW
- Frequency - Transition：300MHz
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-226-3, TO-92-3 Long Body, Formed Leads
- Supplier Device Package：TO-92 (TO-226)
- Grade：-
- Qualification：-
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Overview
The onsemi 2N5551ZL1G is an NPN general-purpose amplifier transistor designed for high-voltage applications. It operates within a collector-emitter voltage of 160 V and a collector-base voltage of 180 V, with a continuous collector current rating of 600 mA. The device features a DC current gain (hFE) ranging from 80 to 250 at IC = 10 mA and VCE = 5.0 V. Thermal characteristics include a total device dissipation of 625 mW and a junction-to-ambient thermal resistance of 200 °C/W. Small-signal performance includes a transition frequency of 100 MHz and a noise figure of 8.0 dB under specified conditions.
Feature Summary
- Designed for general-purpose high-voltage amplifiers
- Capable of driving gas discharge display circuits
- Compliant with RoHS standards and free of halogens and brominated flame retardants
Applications
- General-purpose high-voltage amplification
- Gas discharge display drivers
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm package type and shipping configuration. Confirm availability status as some variants in this series have been discontinued. Ensure compliance with environmental directives such as RoHS requirements before finalizing procurement specifications.
Selection Notes
Select this component when a single NPN silicon transistor is required for high-voltage signal processing or switching tasks. Consider the TO-92-3 package constraints for thermal management and physical space. Evaluate the hFE range and breakdown voltages against circuit requirements to ensure adequate margin for operation.
Part Context
This part belongs to the 2N5551 family of NPN bipolar junction transistors manufactured by onsemi. It serves as a standard discrete semiconductor solution for low-power, high-voltage analog and digital applications. The device utilizes silicon epitaxial planar technology housed in a lead-free TO-92-3 case.
Replacement Considerations
Consult the manufacturer's discontinuation notice for legacy variants. Verify pinout compatibility and electrical parameters if substituting with other NPN transistors from different manufacturers.
