2N5555

Overview

The 2N5555 is an N-channel depletion-mode Junction Field-Effect Transistor (JFET) designed for electronic switching and low on-resistance analog applications. It operates within a drain-gate voltage of 25 V and a gate-source voltage of -25 V, with a maximum junction temperature of 150 °C. The device dissipates up to 350 mW at 25 °C. Electrical characteristics include a zero-gate voltage drain current (IDSS) of 15 mA at 15 V, a maximum drain-source on resistance (RDS(on)) of 150 Ω at 666 mA, and a gate-source cut-off voltage ranging from -2.5 V to 9.5 V. Input capacitance is 5 pF, while reverse transfer capacitance is 1.2 pF.

Feature Summary

• Designed primarily for electronic switching applications requiring low on-resistance analog switching capabilities.
• Utilizes an N-channel depletion-mode silicon junction field-effect transistor structure.
• Engineered for high thermal stability with a maximum operating junction temperature of 150 °C.

Applications

• Low on-resistance analog switching circuits
• Electronic switching applications
• RF amplifier stages

Procurement Notes

Verify the manufacturer origin carefully, as the component was originally produced by Fairchild Semiconductor and may now be distributed under different branding or legacy status. Confirm the specific datasheet revision and electrical test conditions match your design requirements before finalizing procurement decisions.

Selection Notes

Select this component when a depletion-mode N-channel JFET is required for analog switching or RF amplification. Ensure the circuit design accommodates the specified RDS(on) limits and IDSS variations. Verify that the TO-92 package thermal resistance meets the system's heat dissipation needs without exceeding the 150 °C junction temperature limit.

Part Context

The 2N5555 belongs to the family of small-signal N-channel JFETs historically manufactured by Fairchild Semiconductor. It serves as a discrete semiconductor solution for analog signal routing and switching tasks where low insertion loss and fast response times are critical parameters in the circuit design.

Replacement Considerations

Cross-reference with MMBF4391LT1G or 2N4391 for similar JFET switching functionality. Verify pinout compatibility and electrical parameter alignment, specifically RDS(on) and breakdown voltages, before substituting in existing designs.

FAQ

What is the typical operating mode of the 2N5555?

The 2N5555 is a depletion-mode device, meaning it conducts current between the drain and source when the gate-source voltage is zero.

What is the maximum power dissipation rating?

The total device dissipation is rated at 350 mW at an ambient temperature of 25 °C, with a derating factor of 2.8 mW/°C above that temperature.

How does the gate-source cut-off voltage vary?

The gate-source cut-off voltage (VGS(off)) ranges from a minimum of -2.5 V to a maximum of 9.5 V under standard test conditions.