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Product Detailed Parameters
- Description：TRANS PNP 120V 30A TO-63
- Series：-
- Mfr：Microchip Technology
- Package：Bulk
- Transistor Type：PNP
- Current - Collector (Ic) (Max)：30 A
- Voltage - Collector Emitter Breakdown (Max)：120 V
- Vce Saturation (Max) @ Ib, Ic：-
- Current - Collector Cutoff (Max)：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：-
- Power - Max：150 W
- Frequency - Transition：-
- Operating Temperature：-65°C ~ 200°C (TJ)
- Mounting Type：Stud Mount
- Package / Case：TO-211MB, TO-63-4, Stud
- Supplier Device Package：TO-63
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Overview
The Microchip Technology 2N5560 is a high-power PNP bipolar junction transistor (BJT) designed for demanding applications. It features a collector-emitter breakdown voltage of 120 V and a maximum collector current of 30 A. The device has a transition frequency of 40 MHz and includes a collector capacitance specification. This component is classified as a power BJT suitable for robust electronic circuit implementations.
Feature Summary
- High-power PNP bipolar junction transistor construction
- 120 V collector-emitter breakdown voltage rating
- 30 A maximum continuous collector current capability
- 40 MHz transition frequency for switching performance
Applications
- High-power switching circuits
- Industrial control systems
- Power management modules
Procurement Notes
Verify the specific package type and pin configuration against your design requirements before procurement. Confirm that the thermal characteristics meet your system's heat dissipation needs. Ensure the manufacturer documentation matches the exact part number to avoid compatibility issues with existing board layouts or driver circuits.
Selection Notes
Select this component when high current handling and moderate voltage blocking are required in a PNP configuration. Consider the thermal resistance and packaging options for effective heat management. Evaluate the transition frequency against your switching speed requirements to ensure adequate performance in dynamic circuit conditions.
Part Context
The 2N5560 belongs to the family of power bipolar junction transistors manufactured by Microchip Technology. It serves as a discrete semiconductor device used primarily for amplification and switching functions in power electronics. The part is distinct from passive components and integrated circuits, focusing on high-current handling capabilities within a standard transistor form factor.
Replacement Considerations
Consult official Microchip Technology documentation for verified equivalent part numbers. Cross-reference specifications such as current ratings, voltage limits, and package dimensions to ensure functional compatibility. Do not substitute without confirming electrical parameter alignment and thermal performance requirements.
