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The Microchip Technology 2N5581 is a silicon NPN single bipolar junction transistor (BJT) designed for through-hole mounting in the TO-206AB-3 package. It features a maximum DC collector current of 800 mA and a collector-emitter voltage (VCEO) of 50 V. The device supports a collector-base voltage (VCBO) of 75 V and an emitter-base voltage (VEBO) of 6 V. Power dissipation is rated at 2 W, with a collector-emitter saturation voltage of 300 mV. Operating temperatures range from -55°C to +200°C. DC current gain (hFE) ranges from a minimum of 20 at 500 mA/10 V to a maximum of 120 at 150 mA/10 V.
Verify the specific suffix (e.g., JANTXV) against the datasheet to confirm radiation hardness or military qualification levels. Ensure the TO-206AB-3 package dimensions match the mechanical constraints. Confirm that the manufacturer documentation explicitly lists the part as qualified per relevant military standards such as MIL-PRF-19500 series if required for the application.
Select this component when high thermal stability and radiation tolerance are required. The wide operating temperature range makes it suitable for extreme environments. Verify that the 800 mA current rating and 50 V voltage limits meet the circuit requirements. Consider the through-hole mounting style for compatibility with existing board layouts.
This part belongs to the 2N5581 family of NPN power transistors manufactured by Microchip Technology. These devices are typically used in high-reliability applications where standard commercial parts may fail due to environmental stress. The TO-206AB-3 package provides robust mechanical protection and electrical isolation.
Check for direct cross-reference part numbers listed in the official Microchip datasheet. Ensure any substitute matches the TO-206AB-3 footprint and pinout. Verify that the replacement meets the same voltage, current, and temperature specifications.