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Product Detailed Parameters
- Description：TRANS PNP 80V 2A TO66
- Series：-
- Mfr：Microchip Technology
- Package：Bulk
- Transistor Type：PNP
- Current - Collector (Ic) (Max)：2:00 AM
- Voltage - Collector Emitter Breakdown (Max)：80 V
- Vce Saturation (Max) @ Ib, Ic：850mV @ 200µA, 1mA
- Current - Collector Cutoff (Max)：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：-
- Power - Max：20 W
- Frequency - Transition：-
- Operating Temperature：-65°C ~ 200°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-213AA, TO-66-2
- Supplier Device Package：TO-66 (TO-213AA)
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Overview
The Microchip Technology 2N5601 is a silicon PNP bipolar junction transistor housed in a hermetically sealed TO-66 metal package. It features a maximum collector current of 2 A and a collector-emitter breakdown voltage of 80 V. The device exhibits a transition frequency of 60 MHz and a maximum collector-emitter saturation voltage of 850 mV at specified base and collector currents, ensuring efficient switching performance.
Feature Summary
- Hermetically sealed TO-66 metal package for environmental protection
- Excellent safe operating area characteristics
- Low collector-emitter saturation voltage for efficient power handling
Applications
- High frequency power amplifier circuits
- Audio power amplifier stages
- Driver applications requiring robust PNP switching
Procurement Notes
Verify the manufacturer source carefully, as multiple entities including Consolidated Electronics and New Jersey Semi-Conductor have historically produced this part number. Ensure the specific datasheet aligns with the required electrical parameters, particularly regarding the saturation voltage and transition frequency specifications provided by the supplier.
Selection Notes
Select the 2N5601 when a rugged, hermetically sealed PNP transistor is required for high-power or high-frequency applications. The TO-66 package offers superior thermal dissipation and reliability compared to plastic packages. Consider the 80 V breakdown voltage and 2 A current rating to ensure adequate headroom for the intended load conditions.
Part Context
The 2N5601 belongs to the family of silicon PNP power transistors designed for demanding analog and RF applications. It is often grouped with similar devices like the 2N5597, 2N5599, and 2N5603, which share comparable packaging and general functional characteristics within the high-power transistor category.
Replacement Considerations
Public confirmed substitute part numbers are not explicitly listed in the provided documentation. Cross-reference with other TO-66 PNP transistors having matching voltage and current ratings if direct substitution is necessary.
