2N5609

$31.70

Description：TRANS PNP 80V 5A TO66
Series：-

SKU:ae4d29116f32 Category: Single Bipolar Transistors Brand: Microchip Technology

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Product introduction

Product Detailed Parameters

Description：TRANS PNP 80V 5A TO66
Series：-
Mfr：Microchip Technology
Package：Bulk
Transistor Type：PNP
Current - Collector (Ic) (Max)：5:00 AM
Voltage - Collector Emitter Breakdown (Max)：80 V
Vce Saturation (Max) @ Ib, Ic：750mV @ 250µA, 2.5mA
Current - Collector Cutoff (Max)：-
DC Current Gain (hFE) (Min) @ Ic, Vce：-
Power - Max：25 W
Frequency - Transition：-
Operating Temperature：-65°C ~ 200°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-213AA, TO-66-2
Supplier Device Package：TO-66 (TO-213AA)

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2N5609

Overview

The Microchip Technology 2N5609 is a complementary silicon power transistor. It is classified as a Bipolar Junction Transistor (BJT) with NPN polarity and single configuration. The device utilizes Silicon (Si) technology and is designed for through-hole mounting. Key electrical specifications include a maximum DC collector current of 2 A, a Collector-Emitter Maximum Voltage (VCEO) of 200 V, and a Collector-Base Voltage (VCBO) of 250 V. The Emitter-Base Voltage (VEBO) is rated at 6 V, with a Collector-Emitter Saturation Voltage of 400 mV. Power dissipation is 2 W, operating within a temperature range of -65 C to +200 C.

Feature Summary

High voltage capability with 200 V collector-emitter rating
Robust thermal performance supporting up to 200 C operation
Through-hole construction for reliable mechanical mounting

Applications

High voltage switching circuits
Power amplifier stages
Industrial control systems requiring high voltage tolerance

Procurement Notes

Verify the manufacturer designation carefully, as the 2N5609 part number has historically been associated with Central Semiconductor. Confirm that the specific lot or datasheet provided by Microchip Technology matches the required electrical parameters. Ensure the ordering suffix corresponds to the desired packaging format, typically trays for this component type. Cross-reference the RoHS status if environmental compliance is mandatory for the target assembly process.

Selection Notes

Select this component when a high-voltage NPN BJT is required for through-hole applications. The 200 V VCEO rating distinguishes it from lower-voltage alternatives in the complementary series. Consider the 2 W power dissipation limit and the need for appropriate heat sinking during continuous operation. Verify compatibility with the circuit's base drive requirements given the specified saturation voltage characteristics.

Part Context

The 2N5609 belongs to a family of complementary silicon power transistors. It serves as the NPN counterpart to other devices in the series, such as the PNP variants often grouped in similar product lines. This classification supports push-pull configurations in audio and RF power amplification. The component represents a standard discrete solution for medium-power switching tasks where high voltage blocking is essential.