2N5610

Overview

The Microchip Technology 2N5610 is a silicon PNP dual small-signal bipolar junction transistor (BJT) designed for through-hole mounting in the TO-78-6 package. It features a maximum collector-emitter voltage of 60V and a continuous collector current rating of 50mA. The device dissipates up to 350mW of power and operates within a temperature range of -65°C to +200°C. With a DC current gain ranging from 150 to 450 at 100µA, it provides reliable switching and amplification capabilities for general-purpose electronic applications.

Feature Summary

• Dual PNP configuration integrated into a single TO-78-6 metal can package
• High thermal stability with an extended operating temperature range up to +200°C
• Low saturation voltage characteristics for efficient signal switching
• Silicon construction ensuring robust performance in general-purpose circuits

Applications

• General-purpose switching circuits
• Small-signal amplification stages
• Digital logic interface applications

Procurement Notes

Verify the specific manufacturer source and authenticity when sourcing this component, as availability may vary across distributors. Confirm that the received units match the TO-78-6 package style and PNP polarity specifications required by your design. Check for any recent product change notifications or lifecycle status updates directly from Microchip Technology before finalizing procurement plans.

Selection Notes

Select the 2N5610 when a dual PNP BJT solution is required in a hermetically sealed metal package. Its high maximum junction temperature makes it suitable for environments where standard plastic packages might fail. Ensure the circuit design accommodates the 60V voltage limit and 50mA current capability while utilizing the appropriate biasing networks to leverage its specified current gain range.

Part Context

The 2N5610 belongs to the family of dual small-signal transistors manufactured by Microchip Technology. These components are typically utilized in legacy or high-reliability designs requiring the durability of metal can packaging. The dual configuration allows for compact implementation of differential pairs or complementary switching functions within a single footprint.

Replacement Considerations

Consult official cross-reference tools for parametrically equivalent dual PNP transistors in TO-78 packages. Verify that any substitute matches the 60V VCEO rating, 50mA IC limit, and 350mW power dissipation requirements.