2N5614

Overview

The Microchip Technology 2N5614 is a hermetically sealed NPN silicon power transistor housed in the TO-3 metal package. It features a maximum collector-emitter voltage of 60V and a continuous collector current rating of 5A. The device exhibits a minimum DC current gain (hFE) of 70 at a collector current of 2.5A. Key electrical specifications include a maximum power dissipation of 58W, a junction temperature range from -65°C to +200°C, and a maximum base-emitter voltage of 9V. The component is designed for robust performance in high-power applications requiring reliable switching and amplification capabilities.

Feature Summary

• Hermetically sealed construction in a metal TO-3 package for enhanced environmental protection
• High power dissipation capability suitable for demanding linear and switching loads
• Wide safe operating area ensuring stability under varying thermal conditions

Applications

• General-purpose power amplifier circuits
• High-current switching applications
• Linear regulation systems

Procurement Notes

Verify that the specific procurement lot matches the required military or commercial qualification standards, as hermetic sealing processes vary by specification. Confirm the presence of the correct JEDEC designation and pinout configuration before integration. Ensure storage conditions maintain the integrity of the hermetic seal. Cross-reference the manufacturer's latest product change notifications to confirm material consistency and compliance with current industry standards for this legacy component type.

Selection Notes

Select the 2N5614 when a hermetically sealed NPN transistor with a 60V rating and 5A current capacity is required. This component is appropriate for designs necessitating a metal TO-3 package for superior heat dissipation and radiation hardness. Consider the minimum hFE of 70 for biasing calculations. Evaluate thermal management requirements against the 58W dissipation limit. This part is distinct from plastic-packaged equivalents due to its sealed construction and specific mechanical footprint.

Part Context

The 2N5614 belongs to the family of hermetically sealed bipolar junction transistors produced by Microchip Technology. It shares the TO-3 metal case style with other high-reliability devices in the lineup. The component is categorized under discrete semiconductors and specifically within the power transistor segment. Its design supports applications where long-term reliability and environmental resistance are critical factors in system architecture.

Replacement Considerations

Public confirmed substitute part numbers: 2N5616, 2N5618, 2N5620.