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Product Detailed Parameters
- Description：TRANS PNP 80V 5A TO204AA
- Series：-
- Mfr：Microchip Technology
- Package：Bulk
- Transistor Type：PNP
- Current - Collector (Ic) (Max)：5:00 AM
- Voltage - Collector Emitter Breakdown (Max)：80 V
- Vce Saturation (Max) @ Ib, Ic：1.5V @ 500µA, 2.5mA
- Current - Collector Cutoff (Max)：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：-
- Power - Max：58 W
- Frequency - Transition：-
- Operating Temperature：-65°C ~ 200°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-204AA, TO-3
- Supplier Device Package：TO-204AA (TO-3)
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Overview
The Microchip Technology 2N5615 is a silicon PNP power bipolar junction transistor (BJT) designed for through-hole mounting in the TO-3 package. It features a maximum collector-base voltage of 400 V, a collector-emitter voltage of 300 V, and an emitter-base voltage of 6 V. The device supports a continuous collector current of 5 A with a power dissipation rating of 2.5 W. It operates within a temperature range of -65°C to +200°C junction temperature.
Feature Summary
- High-voltage capability suitable for demanding power applications
- Robust thermal performance with extended operating temperature range
- Designed for general-purpose amplification and switching tasks
Applications
- General-purpose amplifier circuits
- Power switching applications
- Industrial control systems requiring high voltage tolerance
Procurement Notes
Verify the specific revision level and manufacturing date code against the latest Microchip datasheet before integration. Confirm that the TO-3 package dimensions match the target chassis or heatsink requirements. Ensure that the supplier provides traceability documentation consistent with military or industrial standards if required by the design specification.
Selection Notes
Select this component when a high-voltage PNP transistor with significant current handling capacity is required. The TO-3 package offers superior thermal dissipation compared to smaller surface-mount alternatives. Consider the 300 V collector-emitter breakdown voltage as a primary constraint for circuit topology design.
Part Context
This part belongs to the legacy 2N series of power transistors manufactured by Microchip Technology. These components are often utilized in ruggedized electronics where long-term availability and proven reliability are critical. The 2N5615 serves as a discrete solution for power management stages in older or specialized industrial equipment designs.
Replacement Considerations
Consult official Microchip substitution guides for verified equivalents. Cross-reference electrical parameters such as VCEO, IC, and PD to ensure functional compatibility without modifying the existing circuit layout.
