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The Microchip Technology 2N5619 is a PNP silicon power bipolar junction transistor housed in a TO-3 metal flange mount package. It features a maximum collector current of 5 A and a collector-emitter breakdown voltage of 100 V. The device has a minimum DC current gain (hFE) of 30 and utilizes a two-terminal configuration.
Verify the specific revision status and lead times directly with Microchip Technology or authorized distributors, as this component may be subject to long production cycles. Confirm RoHS compliance requirements prior to procurement, as indicated by non-compliant status in some records.
Select this component for applications requiring robust PNP power switching capabilities within a TO-3 metal case. Ensure the circuit design accommodates the 100 V collector-emitter voltage rating and provides adequate heat sinking for the 5 A continuous current capability.
This part belongs to the discrete semiconductor category, specifically under bipolar junction transistors manufactured by Microchip Technology. It serves as a legacy power transistor option for industrial and military-grade electronics where through-hole mounting and high thermal dissipation are required.
Consult official substitution lists for equivalent PNP power transistors in TO-3 packages. Verify pinout compatibility and electrical ratings before replacing.
The maximum collector current is 5 A.
It uses a TO-3 metal flange mount package.