2N5624

2N5624

$54.61
  • Description:TRANS PNP 80V 10A TO204AA
  • Series:-

SKU:a4327ec25d7d Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS PNP 80V 10A TO204AA
  • Series:-
  • Mfr:Microchip Technology
  • Package:Bulk
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):10:00 AM
  • Voltage - Collector Emitter Breakdown (Max):80 V
  • Vce Saturation (Max) @ Ib, Ic:-
  • Current - Collector Cutoff (Max):-
  • DC Current Gain (hFE) (Min) @ Ic, Vce:-
  • Power - Max:116 W
  • Frequency - Transition:-
  • Operating Temperature:-
  • Mounting Type:Through Hole
  • Package / Case:TO-204AA, TO-3
  • Supplier Device Package:TO-204AA (TO-3)

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2N5624

Overview

The Microchip Technology 2N5624 is a single NPN silicon power transistor housed in a TO-3 through-hole package. It features a maximum collector-emitter voltage of 80 V and a continuous collector current rating of 10 A. The device supports a maximum power dissipation of 116 W, making it suitable for high-power applications. It operates within a temperature range typically defined by standard industrial specifications for this package type.

Feature Summary

  • High power handling capability with 116 W dissipation rating
  • Robust 10 A continuous collector current capacity
  • Designed for audio and general-purpose amplification tasks

Applications

  • Audio amplifier circuits
  • General-purpose power switching
  • Linear regulation stages

Procurement Notes

Verify the manufacturer origin carefully, as the 2N5624 designation is used by multiple vendors including New Jersey Semi-Conductor and Microchip. Confirm the specific datasheet matches the required electrical characteristics, particularly regarding the TO-3 pinout and thermal resistance values. Ensure the component meets RoHS compliance requirements if applicable to your assembly process.

Selection Notes

Select this component when a high-current NPN transistor with moderate voltage breakdown is required. Compare the 116 W power rating against your thermal management capabilities. Consider the TO-3 package size constraints and mounting requirements. Verify that the 80 V collector-emitter voltage exceeds your circuit's peak operating voltage to ensure reliable operation under all conditions.

Part Context

This part belongs to the family of silicon NPN power transistors designed for robust performance in demanding environments. The TO-3 metal can package provides excellent heat dissipation properties compared to plastic alternatives. It serves as a legacy but widely recognized solution for medium-to-high power linear applications where reliability and thermal stability are critical design factors.

Replacement Considerations

Equivalent parts include the 2N5622 and 2N5626 from various manufacturers. Cross-reference pinouts and absolute maximum ratings before substitution. Ensure the replacement device maintains the same NPN configuration and TO-3 mechanical footprint to fit existing board layouts without modification.

2N56242N5624
$54.61
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