2N5634

2N5634

$60.68
  • Description:TRANS NPN 140V 10A TO-3
  • Series:-

SKU:46736539c65f Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS NPN 140V 10A TO-3
  • Series:-
  • Mfr:Harris Corporation
  • Package:Bulk
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):10:00 AM
  • Voltage - Collector Emitter Breakdown (Max):140 V
  • Vce Saturation (Max) @ Ib, Ic:2V @ 2A, 10A
  • Current - Collector Cutoff (Max):1mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:15 @ 5A, 2V
  • Power - Max:150 W
  • Frequency - Transition:1MHz
  • Operating Temperature:-65°C ~ 200°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-204AA, TO-3
  • Supplier Device Package:TO-3
  • Grade:-
  • Qualification:-

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2N5634

Overview

The Harris Corporation 2N5634 is a silicon NPN power transistor designed for high-power applications. It features a collector-emitter breakdown voltage of 140 V and supports a maximum continuous collector current of 10 A. The device delivers a peak power dissipation of 150 W, making it suitable for demanding circuit environments. It operates within a temperature range of -65°C to +175°C and utilizes the TO-3 (TO-204AA) through-hole package. Key electrical characteristics include a minimum DC current gain of 25 at 5 A and a maximum saturation voltage of 1.0 V at 7.5 A.

Feature Summary

  • High power dissipation capability of 150 W
  • Robust safe operating area performance
  • Low saturation voltage for efficient switching
  • Wide thermal operating range up to 175°C

Applications

  • High-power linear amplifier circuits
  • Industrial motor control systems
  • Power supply output stages

Procurement Notes

Verify manufacturer origin carefully as multiple vendors produce this legacy part number. Confirm package integrity and pin configuration match the TO-3 specification. Check datasheet revisions for parameter variations between original Harris and subsequent manufacturers like Central Semiconductor or Microchip. Ensure compliance with required thermal management standards for the specific application environment.

Selection Notes

Select this component when high current handling and robust thermal performance are required in a through-hole format. Consider the 140 V breakdown limit for voltage headroom. Evaluate thermal resistance requirements given the 150 W dissipation rating. Compare alternative packages if space constraints exist, though the TO-3 offers superior heat sinking capabilities compared to smaller surface-mount options.

Part Context

The 2N5634 belongs to the class of silicon NPN power transistors historically manufactured by Harris Corporation. It serves as a standard replacement for older discrete power devices in industrial equipment. The part is widely recognized for its durability in high-stress environments. Current availability may involve production from various semiconductor companies under the same JEDEC designation.

Replacement Considerations

Direct substitutes include parts from Central Semiconductor Corp and Microchip Technology. Verify that replacement units maintain the 140 V / 10 A / 150 W ratings. Ensure the TO-3 package dimensions are compatible with existing mounting hardware. Cross-reference datasheets for any changes in hFE or VCE(sat) specifications.

2N56342N5634
$60.68
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