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Product Detailed Parameters
- Description：JFET N-CH 30V TO92-3
- Series：-
- Mfr：onsemi
- Package：Bulk
- FET Type：N-Channel
- Voltage - Breakdown (V(BR)GSS)：30 V
- Drain to Source Voltage (Vdss)：30 V
- Current - Drain (Idss) @ Vds (Vgs=0)：50 mA @ 20 V
- Current Drain (Id) - Max：-
- Voltage - Cutoff (VGS off) @ Id：-
- Input Capacitance (Ciss) (Max) @ Vds：10pF @ 12V (VGS)
- Resistance - RDS(On)：30 Ohms
- Power - Max：350 mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package：TO-92-3
- Grade：-
- Qualification：-
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Overview
The onsemi 2N5638 is an N-channel JFET switch designed for low-level analog applications. It operates within a Drain-Gate Voltage of 30 V and a Gate-Source Voltage of -30 V. The device features a Zero-Gate Voltage Drain Current (IDSS) of 50 mA and a Drain-Source On Resistance (rDS(on)) of 30 Ω at 1.0 mA. Small signal characteristics include an Input Capacitance of 10 pF and Reverse Transfer Capacitance of 4.0 pF at 1.0 MHz. Switching performance includes a Turn-On Delay Time of 4.0 ns, Rise Time of 5.0 ns, Turn-Off Delay Time of 5.0 ns, and Fall Time of 10 ns. Total Device Dissipation is rated at 350 mW with a thermal resistance from junction to case of 125 °C/W.
Feature Summary
- Designed specifically for low-level analog switching operations
- Suitable for sample and hold circuits requiring precise signal control
- Compatible with chopper stabilized amplifier configurations
Applications
- Low level analog switching
- Sample and hold circuits
- Chopper stabilized amplifiers
Procurement Notes
Verify the manufacturer origin carefully, as the datasheet indicates Fairchild Semiconductor while current branding may differ. Confirm RoHS compliance status directly with the supplier, as environmental declarations are not explicitly detailed in the provided text. Ensure the TO-92 package matches your PCB footprint requirements before ordering.
Selection Notes
Select this component when designing circuits that require low leakage and fast switching speeds for small signals. The 30 Ω on-resistance and 50 mA IDSS define the drive capability limits. Consider the 350 mW power dissipation rating and ensure adequate thermal management or derating for ambient temperatures exceeding 25°C.
Part Context
The 2N5638 belongs to the JFET category manufactured by Fairchild Semiconductor. It utilizes Silicon technology and is housed in a TO-92-3 through-hole package. This single N-Channel configuration is distinct from MOSFET arrays or Zener diodes found in other product lines.
Replacement Considerations
Consult official documentation for verified substitutes. Cross-referencing requires matching the N-Channel JFET type, TO-92 package, and electrical parameters such as 30V breakdown voltage and 50mA IDSS.
