2N5638RLRA

Overview

The onsemi 2N5638RLRA is a PNP Darlington transistor configured as a single unit. It features a maximum collector-emitter voltage (VCEO) of 30 V and an emitter-base voltage (VEBO) of 10 V. The device supports a maximum DC collector current of 500 mA with a power dissipation rating of 1 W. It utilizes a TO-92-3 (TO-226) through-hole package. The component operates within a temperature range of -55 °C to +150 °C, offering a minimum DC current gain (hFE) between 5000 and 10000.

Feature Summary

• High current amplification capability provided by the Darlington configuration.

Applications

• General-purpose switching applications requiring high gain.

Procurement Notes

Verify the specific manufacturer lot code and date code upon receipt to ensure authenticity. Confirm that the TO-92-3 package dimensions match the design requirements. Check for any obsolescence notices or lifecycle status updates from onsemi before finalizing procurement plans.

Selection Notes

Select this component when a PNP Darlington transistor with moderate voltage ratings and through-hole mounting is required. Ensure the application current does not exceed 500 mA and that the thermal environment allows for 1 W dissipation in the specified package.

Part Context

This part belongs to the discrete semiconductor category, specifically within the transistor family. It serves as a standalone active component for signal amplification and switching tasks in electronic circuits manufactured by onsemi.

Replacement Considerations

Cross-reference with other PNP Darlington transistors in the TO-92-3 package. Verify that substitute parts meet the same VCEO, VEBO, and hFE specifications to maintain circuit performance.