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The onsemi 2N5657G is a plastic NPN silicon high-voltage power transistor housed in a TO-225 package. It features a collector-emitter sustaining voltage of 350 Vdc and a continuous collector current rating of 0.5 Adc. The device supports a total device dissipation of 20 W at 25°C case temperature, with a thermal resistance junction-to-case of 6.25 °C/W. Operating and storage junction temperatures range from -65 to +150 °C.
Verify the specific part number suffix against official documentation to confirm package style and compliance status. Ensure that the procurement source provides valid traceability for the Pb-Free designation. Confirm that the component meets all applicable JEDEC registered data requirements before integration into final designs.
Select this component when designing circuits requiring high-voltage switching capabilities within a compact TO-225 form factor. Consider the thermal resistance and safe operating area curves to ensure reliable operation under varying load conditions. Validate that the required collector current and voltage ratings align with the specified maximum limits for the intended application environment.
This device belongs to the 2N565x series of plastic NPN silicon high-voltage power transistors manufactured by onsemi. The series includes variants with different voltage ratings, designed specifically for robust performance in demanding electronic applications. The 2N5657G variant offers the highest voltage rating within this specific family configuration.
Consult official datasheets for cross-reference information regarding equivalent components. Verify pinout compatibility and electrical parameter alignment before substituting any alternative parts in existing designs.