2N5657G

2N5657G

  • Description:TRANS NPN 350V 0.5A TO-126
  • Series:-

SKU:082b0237aeb0 Category: Brand:

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Product Detailed Parameters

  • Description:TRANS NPN 350V 0.5A TO-126
  • Series:-
  • Mfr:onsemi
  • Package:Bulk
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):500 mA
  • Voltage - Collector Emitter Breakdown (Max):350 V
  • Vce Saturation (Max) @ Ib, Ic:10V @ 100mA, 500mA
  • Current - Collector Cutoff (Max):100µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:30 @ 100mA, 10V
  • Power - Max:20 W
  • Frequency - Transition:10MHz
  • Operating Temperature:-65°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-225AA, TO-126-3
  • Supplier Device Package:TO-126
  • Grade:-
  • Qualification:-

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2N5657G

Overview

The onsemi 2N5657G is a plastic NPN silicon high-voltage power transistor housed in a TO-225 package. It features a collector-emitter sustaining voltage of 350 Vdc and a continuous collector current rating of 0.5 Adc. The device supports a total device dissipation of 20 W at 25°C case temperature, with a thermal resistance junction-to-case of 6.25 °C/W. Operating and storage junction temperatures range from -65 to +150 °C.

Feature Summary

  • High breakdown voltage capability for line-operated equipment
  • Excellent DC current gain characteristics
  • High current-gain bandwidth product

Applications

  • Audio output amplifiers
  • Low-current, high-voltage converters
  • AC line relays

Procurement Notes

Verify the specific part number suffix against official documentation to confirm package style and compliance status. Ensure that the procurement source provides valid traceability for the Pb-Free designation. Confirm that the component meets all applicable JEDEC registered data requirements before integration into final designs.

Selection Notes

Select this component when designing circuits requiring high-voltage switching capabilities within a compact TO-225 form factor. Consider the thermal resistance and safe operating area curves to ensure reliable operation under varying load conditions. Validate that the required collector current and voltage ratings align with the specified maximum limits for the intended application environment.

Part Context

This device belongs to the 2N565x series of plastic NPN silicon high-voltage power transistors manufactured by onsemi. The series includes variants with different voltage ratings, designed specifically for robust performance in demanding electronic applications. The 2N5657G variant offers the highest voltage rating within this specific family configuration.

Replacement Considerations

Consult official datasheets for cross-reference information regarding equivalent components. Verify pinout compatibility and electrical parameter alignment before substituting any alternative parts in existing designs.

2N5657G2N5657G

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