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Product Detailed Parameters
- Description：TRANS NPN 200V 5A TO-5
- Series：-
- Mfr：Microchip Technology
- Package：Bulk
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：5:00 AM
- Voltage - Collector Emitter Breakdown (Max)：200 V
- Vce Saturation (Max) @ Ib, Ic：1V @ 1A, 5A
- Current - Collector Cutoff (Max)：200nA
- DC Current Gain (hFE) (Min) @ Ic, Vce：40 @ 1A, 5V
- Power - Max：1.2 W
- Frequency - Transition：-
- Operating Temperature：-65°C ~ 200°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-205AA, TO-5-3 Metal Can
- Supplier Device Package：TO-5
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Overview
The Microchip Technology 2N5666 is a silicon NPN power bipolar junction transistor designed for high-reliability applications. It features a maximum collector-emitter voltage of 300 V and a continuous collector current rating of 5 A. The device utilizes a TO-5-3 through-hole metal can package with the case connected to the collector. Key electrical limits include a collector-base voltage of 250 V, an emitter-base voltage of 6 V, and a power dissipation capacity of 1.2 W at 25°C ambient temperature. It operates within a temperature range of -65°C to +200°C.
Feature Summary
- Hermetically sealed metal can construction for environmental protection
- High thermal stability supporting operation up to 200°C
- Collector-connected case for efficient heat dissipation
Applications
- Military aerospace switching circuits
- High-voltage power regulation systems
- Industrial control interfaces requiring rugged reliability
Procurement Notes
Verify the specific qualification level (JAN, JANTX, or JANS) required for your application, as performance specifications vary by grade. Confirm RoHS compliance status, as standard military variants may not be compliant. Ensure the ordering suffix matches the desired radiation hardness and testing standards defined in the manufacturer's datasheet.
Selection Notes
Select this component when a hermetically sealed NPN transistor with 300V breakdown and 5A current capability is necessary. Consider the TO-5-3 package constraints for board space and mounting. Evaluate the 1.2W power dissipation limit against thermal management requirements to ensure safe operating area compliance during peak loads.
Part Context
This part belongs to the MIL-PRF-19500 qualified family of NPN power transistors. It shares structural similarities with the 2N5664 and 2N5665 but offers higher voltage ratings. The series is widely used in defense and space electronics where long-term reliability and resistance to harsh environments are critical design parameters.
Replacement Considerations
Direct substitutes include the 2N5664 and 2N5665, provided their lower voltage or current ratings meet the circuit requirements. Verify pinout compatibility and thermal characteristics before swapping.
