2N5666U3

Overview

The 2N5666U3 is an NPN silicon power bipolar junction transistor manufactured by Microchip Technology. It features a collector-emitter voltage of 300 V and a collector-base voltage of 250 V, with an emitter-base voltage rating of 6 V. The device supports a maximum DC collector current of 5 A and dissipates up to 5 W of power. It operates within a temperature range from -65 °C to +200 °C. The component utilizes a surface-mount TO-202AA (TO-58) package configuration.

Feature Summary

• High-voltage capability suitable for demanding power applications
• Extended thermal operating range up to 200 °C
• Surface-mount construction for automated assembly

Applications

• High-voltage switching circuits
• Power amplifier stages
• Industrial control systems

Procurement Notes

Verify the specific suffix U3 against official Microchip documentation to confirm the exact package type and qualification level. Ensure that the procurement channel provides valid traceability records. Confirm compliance requirements prior to ordering.

Selection Notes

Select this component when high voltage blocking and moderate current handling are required in a surface-mount form factor. Compare the 5 W power dissipation limit against thermal management capabilities. Verify that the 300 V rating exceeds the peak circuit voltages.

Part Context

This part belongs to the 2N566x series of NPN power transistors produced by Microchip Technology. The series includes variants such as the through-hole 2N5666 and other related models designed for robust power switching applications.

Replacement Considerations

Consult official substitution lists for verified equivalents. Generic replacements may not match the specific voltage or thermal ratings.