2N5667

Overview

The Microchip Technology 2N5667 is an NPN silicon power switching transistor housed in a TO-66 metal can package. It supports a maximum collector current of 5 A and a collector-emitter voltage rating of 300 V. The device features a minimum DC current gain (hFE) of 25 and operates within a temperature range extending up to +200°C. Qualified per MIL-PRF-19500/455, it serves as a general-purpose high-power component for demanding environments.

Feature Summary

• High-voltage capability with a 300 V collector-emitter breakdown rating
• Robust thermal performance supporting operation up to +200°C
• Military-grade qualification compliant with MIL-PRF-19500/455 standards

Applications

• High-voltage switching circuits
• Power amplification stages
• Military and aerospace electronic systems

Procurement Notes

Verify the specific suffix code against official Microchip documentation to confirm exact electrical tolerances and screening levels. Ensure the procurement channel provides valid traceability records required for components qualified under MIL-PRF-19500/455 specifications.

Selection Notes

Select this component when a 300 V NPN power transistor is required in a TO-66 package. Confirm that the 5 A continuous collector current and 25 minimum hFE meet circuit requirements. Verify compatibility with high-temperature operating conditions up to +200°C.

Part Context

This part belongs to the 2N566x series of NPN power transistors manufactured by Microchip Technology. The series includes variants such as the 2N5664, 2N5665, and 2N5666, which share similar physical packaging but differ in voltage ratings and specific military qualification levels.

Replacement Considerations

Direct substitutes include other 2N5667 variants with different suffixes (e.g., JANTX, JANS) if voltage and current ratings match. Cross-referencing with MIL-PRF-19500/455 equivalents from other manufacturers requires verification of pinout and absolute maximum ratings.