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The Microchip Technology 2N5667S is an NPN silicon power switching transistor designed for high-voltage applications. It features a maximum collector-emitter voltage of 300 V and a continuous collector current rating of 5 A. The device is housed in a TO-66 metal can package with a flange mount configuration, supporting a maximum environmental power dissipation of 52 W at 25°C ambient temperature. Qualified per MIL-PRF-19500/455, it ensures reliability in demanding environments.
Verify the specific suffix against official Microchip documentation to confirm exact electrical tolerances and radiation hardness levels. Ensure the procurement channel provides valid traceability records required for components qualified under MIL-PRF-19500/455 specifications.
Select this component when a high-voltage NPN transistor with significant current capacity is required. The TO-66 package facilitates effective heat dissipation through direct mounting. Confirm that the application environment aligns with the specified operating temperature range and power dissipation limits.
This part belongs to the 2N566x series of NPN power transistors manufactured by Microchip Technology (formerly Microsemi). The series includes variants with different voltage ratings, such as the 2N5664 and 2N5665, all sharing similar physical packaging and general-purpose power characteristics.
Publicly confirmed substitute part numbers are not available in the provided source material. Verify compatibility with existing designs before considering alternative manufacturers or pin-compatible devices.