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Product Detailed Parameters
- Description：POWER BJT
- Series：*
- Mfr：Microchip Technology
- Package：Bulk
- Transistor Type：-
- Current - Collector (Ic) (Max)：-
- Voltage - Collector Emitter Breakdown (Max)：-
- Vce Saturation (Max) @ Ib, Ic：-
- Current - Collector Cutoff (Max)：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：-
- Power - Max：-
- Frequency - Transition：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
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Overview
The 2N5675 is a silicon PNP discrete semiconductor transistor manufactured by SEMELAB, often associated with Microchip Technology in distribution channels. It utilizes a TO-5 metal case package and operates with a collector-base breakdown voltage of 125 V and a collector-emitter breakdown voltage of 100 V. The device supports a maximum power dissipation of 1.0 W and features a transition frequency of 50 MHz. These specifications define its electrical limits and physical configuration for circuit integration.
Feature Summary
- Utilizes a robust TO-5 metal case package for reliable thermal management and mechanical stability.
- Provides high voltage handling capabilities suitable for demanding circuit environments.
- Features a transition frequency of 50 MHz for effective signal processing.
Applications
- General-purpose amplification circuits
- Switching applications requiring high voltage tolerance
- RF small signal processing
Procurement Notes
Verify the manufacturer origin carefully, as the component is produced by SEMELAB but frequently listed under Microchip Technology distribution networks. Confirm the specific package type and electrical ratings match the design requirements before procurement. Ensure that the sourcing channel provides authentic components to avoid counterfeit risks associated with mixed supply chains.
Selection Notes
Select this component when a PNP transistor with a TO-5 package and 100 V collector-emitter rating is required. Consider the 1.0 W power dissipation limit and 50 MHz transition frequency for compatibility with the target circuit's speed and thermal constraints. Evaluate the need for metal can packaging versus alternative surface-mount options if space is limited.
Part Context
The 2N5675 belongs to the category of discrete semiconductors, specifically silicon PNP transistors. It serves as a fundamental active component in electronic designs, distinct from integrated circuits like the DAC5675AIPHP. Its classification emphasizes its role as a standalone switching or amplifying element within broader system architectures.
Replacement Considerations
Consult official datasheets for direct substitutes with matching TO-5 packaging and PNP polarity. Verify that replacement parts meet or exceed the 100 V CEO and 125 V CBO breakdown voltages. Ensure thermal and frequency characteristics align with the original 2N5675 specifications to maintain circuit performance.
FAQ
What is the maximum collector-emitter voltage for the 2N5675?
The maximum collector-emitter breakdown voltage (Vbr CEO) is 100 V.
Which package type does the 2N5675 use?
The component is housed in a TO-5 metal case package.
