2N5679 TIN/LEAD

$1.36

Description：100V 1A 1W TH TRANSISTOR-SMALL S
Series：-

SKU:496a69590a83 Category: Single Bipolar Transistors Brand: Central Semiconductor Corp

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Product introduction

Product Detailed Parameters

Description：100V 1A 1W TH TRANSISTOR-SMALL S
Series：-
Mfr：Central Semiconductor Corp
Package：Box
Transistor Type：PNP
Current - Collector (Ic) (Max)：1:00 AM
Voltage - Collector Emitter Breakdown (Max)：100 V
Vce Saturation (Max) @ Ib, Ic：2V @ 200mA, 1A
Current - Collector Cutoff (Max)：10µA
DC Current Gain (hFE) (Min) @ Ic, Vce：40 @ 250mA, 2V
Power - Max：1 W
Frequency - Transition：30MHz
Operating Temperature：-65°C ~ 200°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-205AD, TO-39-3 Metal Can
Supplier Device Package：TO-39
Grade：-
Qualification：-

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2N5679 TIN/LEAD

Overview

The Central Semiconductor Corp 2N5679 is a silicon PNP power transistor manufactured via epitaxial planar process. It features a collector-emitter voltage (VCEO) of 40 V and a collector-base voltage (VCBO) of 40 V. The device supports a continuous collector current of 1 A with a maximum power dissipation of 1 W. Key electrical characteristics include an emitter-base voltage (VEBO) of 4 V, a collector-emitter saturation voltage of 600 mV, and a gain-bandwidth product (fT) of 30 MHz. Operating temperatures range from -65°C to +200°C.

Feature Summary

Epitaxial planar silicon construction for robust performance
High junction temperature capability up to 200°C
Designed as a driver for high-power transistors

Applications

Driver stage for high-power transistors
General-purpose power switching applications
Amplifier circuits requiring high-temperature operation

Procurement Notes

Verify the specific suffix 'TIN/LEAD' to confirm lead composition, as this indicates non-rohs compliance compared to Pb-free variants. Confirm package type matches TO-39 metal case requirements. Check datasheet for exact thermal resistance values if heatsinking is required. Ensure operating conditions do not exceed the 200°C maximum junction temperature limit during procurement validation.

Selection Notes

Select this component when a PNP power transistor with high-temperature tolerance is required. The 2N5679 complements the NPN 2N5681 in complementary pairs. Consider the 1 A current rating and 1 W power dissipation limits. The TO-39 metal package offers superior thermal performance compared to plastic packages. Verify that the 40 V voltage ratings suit the circuit design.

Part Context

The 2N5679 belongs to a series of complementary silicon power transistors manufactured by Central Semiconductor. It is paired with the 2N5681 (NPN) to form complementary sets. These devices are built using epitaxial planar technology, distinguishing them from older alloy junction types. The series is designed for applications requiring reliable power handling in demanding environments.