2N5679

Overview

The onsemi 2N5679 is a single bipolar PNP transistor housed in a TO-39 metal can package. It features a maximum power dissipation of 1 W and supports through-hole mounting. The device exhibits a minimum DC current gain (hFE) of 40 at an Ic of 250 mA and Vce of 2V. Designed for general-purpose amplifier and switching applications, it serves as a driver for high-power transistors.

Feature Summary

• Epitaxial planar silicon construction
• High voltage capability up to -100V
• Metal can packaging for thermal stability

Applications

• Driver for high power transistors
• General purpose amplifiers
• Switching circuits

Procurement Notes

Verify the manufacturer marking matches onsemi specifications. Confirm the TO-39 metal can package type and pinout alignment with official datasheets. Ensure the component meets the required hFE and voltage ratings for your specific circuit design before integration.

Selection Notes

Select this PNP transistor when a robust metal-can package is required for high-voltage switching or amplification. Consider its 1W power dissipation limit and 1A collector current capacity against your load requirements. Verify compatibility with complementary NPN devices if using push-pull configurations.

Part Context

This component belongs to the family of complementary silicon power transistors, often paired with NPN variants like the 2N5681. It is manufactured using epitaxial planar processes to ensure reliable performance in medium-power applications requiring high-frequency operation and stable thermal characteristics.

Replacement Considerations

Direct substitutes include the 2N5680 and ECG323. These parts share similar electrical characteristics and TO-39 packaging. Verify pinout compatibility and voltage ratings before swapping components in existing designs.