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The Microchip Technology 2N5680L is a PNP silicon power transistor designed for general-purpose applications. It features a collector-emitter voltage (VCEO) of 120V and a continuous collector current (IC) of 1A. The device operates within a power dissipation limit of 1W at an ambient temperature of 25°C, with a junction temperature range spanning from -65°C to +150°C. Key electrical characteristics include a DC current gain (hFE) minimum of 40 and a maximum of 150. The emitter-base voltage (VEBO) is rated at 4V, while the collector-emitter saturation voltage is specified at 1V. The component is housed in a TO-39 metal can package.
Verify the manufacturer designation as Microchip Technology when sourcing this component. Confirm the specific suffix 'L' corresponds to the TO-39 package variant. Ensure compliance with RoHS standards if required by your assembly process. Cross-reference datasheet parameters against your circuit requirements before finalizing procurement orders.
Select the 2N5680L for applications requiring a high-voltage PNP transistor with moderate current handling capabilities. Consider the TO-39 package for thermal management needs in industrial environments. Evaluate the hFE range to ensure compatibility with your biasing network. This component is suitable for designs prioritizing reliability over miniaturization due to its metal case structure.
The 2N5680L belongs to the family of standard NPN/PNP small-signal and power transistors defined by JEDEC specifications. It serves as a discrete semiconductor solution for linear and switching operations. The part number indicates a specific voltage and current rating profile distinct from lower-power signal transistors or higher-power power transistors.
Consult official substitution lists for direct replacements. Generic equivalents may vary in hFE ranges or thermal resistance. Verify pinout compatibility for TO-39 packages before swapping components in existing designs.