2N5682 TIN/LEAD

$1.69

Description：120V 1A 1W TH TRANSISTOR-SMALL S
Series：-

SKU:a7ed0a17cd6d Category: Single Bipolar Transistors Brand: Central Semiconductor Corp

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Product introduction

Product Detailed Parameters

Description：120V 1A 1W TH TRANSISTOR-SMALL S
Series：-
Mfr：Central Semiconductor Corp
Package：Box
Transistor Type：NPN
Current - Collector (Ic) (Max)：1:00 AM
Voltage - Collector Emitter Breakdown (Max)：120 V
Vce Saturation (Max) @ Ib, Ic：2V @ 200mA, 1A
Current - Collector Cutoff (Max)：10µA
DC Current Gain (hFE) (Min) @ Ic, Vce：40 @ 250mA, 2V
Power - Max：1 W
Frequency - Transition：30MHz
Operating Temperature：-65°C ~ 200°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-205AD, TO-39-3 Metal Can
Supplier Device Package：TO-39
Grade：-
Qualification：-

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2N5682 TIN/LEAD

Overview

The Central Semiconductor Corp 2N5682 TIN/LEAD is a silicon NPN power bipolar junction transistor housed in a metal TO-39 package. It supports a maximum collector current of 1 A and withstands a collector-emitter breakdown voltage of 120 V. The device features a single-element configuration with three pins, designed for through-hole mounting. It operates at temperatures up to 200 °C and is classified under JEDEC-95 code TO-39.

Feature Summary

Constructed from silicon material for robust performance
Utilizes a cylindrical metal TO-39 package for thermal stability
Designed as a single-element NPN power transistor

Applications

Power switching circuits requiring high voltage tolerance
Amplifier stages within industrial equipment
General-purpose discrete semiconductor applications

Procurement Notes

Verify the specific plating suffix when ordering, as tin/lead variants differ from lead-free options. Confirm RoHS compliance status directly with the manufacturer or authorized distributors, as this specific variant may not meet modern environmental directives. Ensure the supplier provides official datasheets to validate electrical parameters before integration into designs.

Selection Notes

Select this component when a metal-can package is required for superior heat dissipation compared to plastic alternatives. The 120 V rating makes it suitable for medium-voltage applications where standard small-signal transistors would fail. Consider the through-hole form factor for legacy board layouts or high-reliability environments requiring mechanical strength.

Part Context

This part belongs to the broader category of power bipolar transistors manufactured by Central Semiconductor. It shares the TO-39 metal can format with other high-power devices in their portfolio. The 2N5682 designation indicates its historical equivalence to earlier industry standards while maintaining specific voltage and current ratings defined by the manufacturer.