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The onsemi 2N5684 is a PNP silicon power transistor designed for high-power amplifier and switching circuit applications. It features a continuous collector current of 50 Amperes, a collector-emitter voltage rating of 80 Vdc, and a total device dissipation of 300 Watts at 25°C case temperature. The component operates within a junction temperature range of -65 to +200°C and utilizes a TO-204AE (TO-3) through-hole package.
Verify the specific datasheet revision and JEDEC registration status when sourcing components. Confirm that the TO-204AE package dimensions match the required mechanical constraints. Ensure thermal management solutions are adequate for the specified 300 Watt dissipation rating at the target operating temperature.
Select this component for designs requiring high current handling and robust thermal performance. Consider the complementary 2N5686 NPN variant for push-pull configurations. Evaluate the thermal resistance characteristics and safe operating area curves to ensure reliable operation under varying duty cycles and load conditions.
This part belongs to the 2N5684/2N5686 family of high-current complementary silicon power transistors manufactured by onsemi. These devices are engineered specifically for demanding power electronics applications where high current capacity and low saturation voltages are critical requirements.
The 2N5686 serves as the direct NPN complementary counterpart within the same series. Verify pinout compatibility and electrical parameter alignment before substituting with other TO-3 packaged PNP transistors.
The maximum collector-emitter sustaining voltage (VCEO) is rated at 80 Vdc.
The DC current gain (hFE) ranges from 15 to 60 when tested at a collector current of 25 Amperes.
The transistor has a maximum junction-to-case thermal resistance of 0.584°C/W and can operate up to a peak junction temperature of 200°C.