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The onsemi 2N5684G is a PNP bipolar junction transistor (BJT) designed for through-hole mounting in the TO-204 (TO-3) package. It features a maximum collector current of 50 A and a collector-emitter breakdown voltage of 80 V. The device supports a maximum power dissipation of 300 W and operates within a temperature range of -65°C to +200°C. Key electrical characteristics include a transition frequency of 2 MHz, a minimum DC current gain of 15 at 25 A, and a collector-emitter saturation voltage of 5 V at 10 A and 50 A.
Verify component authenticity by checking manufacturer markings against official datasheet specifications. Confirm package integrity and lead condition prior to installation. Ensure compliance with RoHS directives if required by the specific application environment. Review the latest product change notices for any manufacturing updates that may affect form or fit dimensions.
Select this component when high current switching and robust thermal performance are required in a through-hole configuration. The TO-204 package facilitates effective heat dissipation for high-power designs. Consider the 80 V voltage rating and 50 A current limits to ensure adequate headroom for the intended load conditions and operating temperatures.
This part belongs to the 2N5684 series of discrete semiconductor products manufactured by onsemi. It is classified as a single PNP bipolar transistor within the broader category of discrete semiconductors. The component is engineered for standard industrial and commercial electronics applications requiring reliable high-power switching capabilities.
Consult official substitution guides for verified equivalents. Cross-reference pinouts and thermal resistance values before implementation.