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The 2N5745 is a PNP silicon high-power transistor manufactured by Microchip Technology. It features a maximum collector current of 20 A and a total power dissipation of 200 W. The device has a minimum DC current gain (hFE) of 15 and a transition frequency of 2 MHz. It supports an operating temperature up to 200 °C. The component is available in through-hole packaging and is designed for industrial applications requiring robust power handling capabilities.
Verify the manufacturer designation, as the 2N5745 is historically associated with multiple vendors including Boca Semiconductor and Mospec. Confirm that the specific unit supplied matches the Microchip Technology specification sheet regarding absolute maximum ratings and thermal characteristics. Ensure the package type aligns with the required mounting configuration for the intended application.
Select this component when a PNP transistor with high current capacity and significant power dissipation is required. The 200 W rating and 20 A current limit make it suitable for heavy-duty industrial environments. Consider the 2 MHz transition frequency for speed requirements and ensure adequate heat sinking is provided to manage the thermal load within the 200 °C junction temperature limit.
The 2N5745 belongs to the family of high-power silicon transistors used in demanding electronic systems. It serves as a critical active element in circuits requiring substantial power handling. The part is documented across various semiconductor manufacturer catalogs, indicating its widespread use in legacy and modern industrial designs where robustness and high current are prioritized over high-frequency operation.
Equivalent parts include those from Mospec Semiconductor and New Jersey Semi-Conductor Products. Verify pinout compatibility and thermal resistance values before substitution to ensure performance parity in high-power applications.