2N5758

Overview

The Microchip Technology 2N5758 is a silicon NPN general-purpose power bipolar junction transistor housed in a hermetically sealed TO-3 metal package. It supports a maximum collector current of 15 A and a collector-emitter voltage of 80 V, with a minimum DC current gain of 20. The device features two pins with tin-lead coating and flange mount configuration. Operating temperature reaches up to 175°C, and it complies with MIL-PRF-19500 high-reliability specifications.

Feature Summary

• Hermetically sealed TO-3 metal package for environmental protection
• High collector current capability of 15 A
• Compliance with MIL-PRF-19500 high-reliability standards

Applications

• High-power switching circuits
• Industrial control systems
• Military and aerospace electronics

Procurement Notes

Verify the specific manufacturer source, as the 2N5758 designation appears across multiple vendors including Semelab and Littlediode. Confirm whether the required unit includes the -HR suffix for MIL-PRF-19500 compliance. Ensure the TO-3 package dimensions match the design requirements before procurement.

Selection Notes

Select this component for applications requiring robust NPN power handling in a hermetically sealed environment. Consider the 15 A current limit and 80 V breakdown voltage when designing circuit parameters. Verify thermal management needs due to the 150 W dissipation rating and TO-3 mounting style.

Part Context

The 2N5758 belongs to the family of silicon NPN power transistors designed for high-reliability environments. It is commonly used in military and industrial sectors where hermetic sealing and high current capacity are critical. The TO-3 package provides mechanical strength and efficient heat dissipation for power applications.

Replacement Considerations

Check datasheets for equivalent NPN power transistors in TO-3 packages with similar current and voltage ratings. Verify pinout compatibility and thermal characteristics before substitution.