2N5759

Overview

The Microchip Technology 2N5759 is a silicon NPN power transistor housed in a TO-3 package. It features a maximum collector current of 6 A and a collector-emitter breakdown voltage of 120 V. The device supports a maximum power dissipation of 150 W, making it suitable for high-power applications requiring robust switching capabilities.

Feature Summary

• High power handling capability with 150 W dissipation rating
• Designed for high-voltage switching operations up to 120 V
• Robust construction using silicon technology

Applications

• High-power audio amplifier circuits
• High-voltage switching regulator circuits

Procurement Notes

Verify the manufacturer source carefully, as the 2N5759 designation is historically associated with multiple vendors including Savantic and New Jersey Semi-Conductor. Confirm that the specific unit supplied matches the required electrical specifications and physical TO-3 package dimensions before integration into designs.

Selection Notes

Select this component when designing circuits requiring an NPN power transistor with a 120 V breakdown voltage and 6 A continuous current capacity. Ensure the thermal management system can handle the 150 W power dissipation limit inherent to the TO-3 package configuration.

Part Context

This part belongs to the category of single bipolar transistors, specifically classified as a silicon NPN power transistor. It is distinct from varactor diodes or PNP variants sometimes listed under similar identifiers in general databases.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Verify compatibility with existing circuit requirements if sourcing from alternative manufacturers.