2N5769 PBFREE

$0.20

Description：15V 200MA 350MW TH TRANSISTOR-SM
Series：-

SKU:9cbda40d93c4 Category: Single Bipolar Transistors Brand: Central Semiconductor Corp

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Product introduction

Product Detailed Parameters

Description：15V 200MA 350MW TH TRANSISTOR-SM
Series：-
Mfr：Central Semiconductor Corp
Package：Box
Transistor Type：NPN
Current - Collector (Ic) (Max)：200 mA
Voltage - Collector Emitter Breakdown (Max)：15 V
Vce Saturation (Max) @ Ib, Ic：500mV @ 10mA, 100mA
Current - Collector Cutoff (Max)：400nA
DC Current Gain (hFE) (Min) @ Ic, Vce：40 @ 10mA, 350mV
Power - Max：350 mW
Frequency - Transition：500MHz
Operating Temperature：-65°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package：TO-92-3
Grade：-
Qualification：-

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2N5769 PBFREE

Overview

The 2N5769 PBFREE is an NPN silicon small-signal bipolar junction transistor manufactured by Central Semiconductor Corp. It features a collector-emitter breakdown voltage of 15 V and supports a maximum DC collector current of 500 mA. The device is designed for ultra-high-speed saturated switching applications, offering a transition frequency of 500 MHz. It dissipates up to 350 mW of power and is housed in a TO-92 through-hole package with three pins.

Feature Summary

Epitaxial planar NPN silicon construction optimized for high-speed performance
Designed specifically for ultra-high-speed saturated switching operations
Through-hole mounting configuration in a standard cylindrical plastic package

Applications

High-speed digital logic circuits
Ultra-fast saturated switching applications
Small-signal amplification requiring rapid response times

Procurement Notes

Verify the specific ordering suffix against manufacturer documentation to confirm lead-free compliance and terminal plating specifications. Ensure the procurement request explicitly matches the 2N5769 PBFREE designation to avoid confusion with tin/lead variants or alternative manufacturers producing similar part numbers. Confirm RoHS status directly with the supplier prior to finalizing orders.

Selection Notes

Select this component when circuit requirements demand a low-voltage NPN transistor capable of operating at high frequencies up to 500 MHz. The 15 V collector-emitter rating limits its use to low-voltage environments. Consider the TO-92 package constraints for thermal management and board space compared to surface-mount alternatives if higher power dissipation is required.

Part Context

This component belongs to the family of epitaxial planar NPN silicon transistors produced by Central Semiconductor Corp. These devices are engineered to provide superior switching speeds compared to standard general-purpose transistors. The 2N5769 series is distinct from higher-voltage counterparts like the PN3569, focusing instead on speed within a low-voltage operational envelope.