2N5769 TIN/LEAD

$0.23

Description：15V 200MA 350MW TH TRANSISTOR-SM
Series：-

SKU:1bd9cb808740 Category: Single Bipolar Transistors Brand: Central Semiconductor Corp

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Product introduction

Product Detailed Parameters

Description：15V 200MA 350MW TH TRANSISTOR-SM
Series：-
Mfr：Central Semiconductor Corp
Package：Box
Transistor Type：NPN
Current - Collector (Ic) (Max)：200 mA
Voltage - Collector Emitter Breakdown (Max)：15 V
Vce Saturation (Max) @ Ib, Ic：500mV @ 10mA, 100mA
Current - Collector Cutoff (Max)：400nA
DC Current Gain (hFE) (Min) @ Ic, Vce：40 @ 10mA, 350mV
Power - Max：350 mW
Frequency - Transition：500MHz
Operating Temperature：-65°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package：TO-92-3
Grade：-
Qualification：-

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2N5769 TIN/LEAD

Overview

The Central Semiconductor Corp 2N5769 TIN/LEAD is a small signal NPN silicon bipolar junction transistor housed in a TO-92 package. It features a collector-emitter breakdown voltage of 15V and supports a maximum continuous collector current of 200mA. The device is engineered for ultra-high-speed saturated switching applications, offering a transition frequency of 500MHz. With a power dissipation rating of 350mW and a minimum DC current gain (hFE) of 40, it provides reliable performance for general-purpose switching tasks.

Feature Summary

Engineered for ultra-high-speed saturated switching applications
Utilizes epitaxial planar NPN silicon construction
Supports high-frequency operation with a 500MHz transition frequency

Applications

High-speed saturated switching circuits
General-purpose NPN transistor applications
RF oscillator circuits

Procurement Notes

Verify the specific ordering suffix requirements when requesting Tin/Lead plated devices. Manufacturers typically require adding the suffix “TIN/LEAD” to the base part number during the ordering process to ensure compliance with material specifications. Confirm lead availability and production timelines directly with authorized distributors or the manufacturer prior to purchase.

Selection Notes

Select this component for designs requiring fast switching speeds within a low-voltage environment. The 15V breakdown voltage and 200mA current capacity suit low-power switching needs. Ensure the application operates within the 350mW power dissipation limit and utilizes a TO-92 compatible footprint for proper thermal management and mechanical mounting.

Part Context

This component belongs to the family of small signal bipolar transistors designed for discrete semiconductor applications. It serves as a fundamental active element in electronic circuits, providing amplification and switching capabilities. The TO-92 through-hole packaging facilitates easy integration into standard printed circuit boards for prototyping and manufacturing.