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The onsemi 2N5769 is an NPN switching transistor designed for high-speed saturated switching applications at currents up to 100 mA. It features a collector-emitter voltage of 15 V, a continuous collector current of 200 mA, and a total device dissipation of 350 mW. The component operates within a junction temperature range of -55 °C to +150 °C. Electrical characteristics include a turn-on time of 12 ns, a storage time of 13 ns, and a turn-off time of 18 ns under specified test conditions.
Verify the manufacturer origin carefully, as the datasheet indicates Fairchild Semiconductor Corporation. Confirm that the specific ordering suffix matches the required packaging style (e.g., Ammo Pack or Tape and Reel) and lead configuration. Ensure the component status aligns with production availability requirements before finalizing procurement plans.
Select this component when high-speed switching is required at moderate current levels. The TO-92 package suits through-hole mounting needs. Evaluate thermal resistance values against the expected ambient temperature to ensure operation remains within the specified junction temperature limits during continuous duty cycles.
This NPN transistor belongs to the discrete power and signal technologies category. It is sourced from Process 21 and shares characteristics with the PN2369A. The device utilizes a standard TO-92 metal can package, providing a robust solution for general-purpose switching tasks in electronic designs.
Consult the datasheet for the PN2369A regarding comparable electrical characteristics. Verify pinout compatibility and thermal performance metrics before substituting any alternative components in existing circuit layouts.
The collector-emitter breakdown voltage is 15 V.
The turn-on time is 12 ns, the storage time is 13 ns, and the turn-off time is 18 ns.
No, the product is not authorized for use as a critical component in life support devices without express written approval.