2N5770

Overview

The onsemi 2N5770 is an NPN RF transistor designed for use in amplifiers, oscillators, and multipliers. It operates with collector currents ranging from 1.0 mA to 30 mA. The device features a Collector-Emitter Voltage (VCEO) of 15 V and a Collector-Base Voltage (VCBO) of 30 V. Maximum continuous collector current is rated at 50 mA. Total device dissipation is 350 mW at 25°C ambient temperature. The component utilizes a TO-92 package and supports an operating junction temperature range from -55°C to +150°C.

Feature Summary

• Designed for RF amplifier, oscillator, and multiplier applications
• Features low noise figure characteristics suitable for signal processing
• Provides high power gain performance at microwave frequencies

Applications

• RF amplification circuits
• Oscillator designs
• Frequency multiplier stages

Procurement Notes

Verify the manufacturer origin carefully, as the datasheet indicates Fairchild Semiconductor copyright while the brand is listed as onsemi. Confirm the specific packaging option required, such as bulk or tape and reel, as multiple configurations exist. Ensure the revision level matches the design requirements before ordering.

Selection Notes

Select this component for low-voltage RF applications requiring moderate power output. Verify that the operating frequency aligns with the specified small-signal current gain and power gain measurements. Ensure thermal management accommodates the 350 mW dissipation limit within the specified temperature range.

Part Context

This discrete NPN RF transistor belongs to the broader category of radio frequency semiconductor devices. It is historically associated with Fairchild Semiconductor technology now managed under onsemi. The component serves specialized roles in communication systems where specific voltage and current constraints apply.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.